A method and system for forming material within a gap on a surface of a substrate using metal material are disclosed. An exemplary method includes forming a layer of meltable material overlying the substrate and heating the meltable material to a flow temperature to form molten material that flows within the gap.

Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region and forming a first layer of material on the substrate. The first layer of material may include silicon oxide. The methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber and forming a plasma of the germanium-containing precursor in the processing region. Forming the plasma of the germanium-containing precursor may be performed at a plasma power of greater than or about 500 W. The methods may include forming a second layer of material on the substrate. The second layer of material may include germanium oxide.

Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

The present invention relates to coating glass for architectural or automotive use, either monolithic or laminated, having solar control properties. The coating consists of several layers of different metal oxide semiconductors (TiO.sub.2, ZnO, ZrO.sub.2, SnO.sub.2, AlO.sub.x) and a layer of metallic nanoparticles, which when superimposed on a pre-established order give the glass solar control properties. In particular the use of protective layers of n-type semiconductors around the metallic nanoparticles layer. It also relates to the method for obtaining the coating by means of the aerosol-assisted chemical vapor deposition technique, using precursor solutions containing an organic or inorganic salt (acetates, acetylacetonates, halides, nitrates) of the applicable elements and an appropriate solvent (water, alcohol, acetone, acetylacetone, etc.). The synthesis is performed at a temperature between 100 and 600° C. depending on the material to be deposited. A nebulizer converts the precursor solution into an aerosol which is submitted with a gas to the substrate surface, where due to the temperature the thermal decomposition of the precursor occurs and the deposition of each layer of the coating occurs.

A method of forming an optical thin film, comprises providing an assembly comprising a layer of semiconductor material deposited on a substrate, the semiconductor material comprising a compound of at least one metal and a group VI element; depositing a masking layer onto the layer of semiconductor material, the masking layer being patterned to expose one or more regions of the layer of semiconductor material; applying to the assembly a plasma of the group VI element in order to cause indiffusion of the group VI element into the semiconductor material in the exposed regions while the masking layer blocks indiffusion in unexposed regions, the indiffusion causing a reduction in carrier density in the semiconductor material; and removing the masking layer; thereby forming, from the layer of semiconductor material, an optical thin film having a variation in carrier density and corresponding variation in optical properties matching the patterning of the masking layer in a plane parallel to the substrate.

Methods for making nanolaminates using Vapor Deposited methods such as Chemical Vapor Deposition and Physical Vapor Deposition, which can be applied on various surfaces, including glass, the soft polymeric material, or surgical instruments, as well as synthetic, composite, and organic materials. Methods of manufacturing nanolaminates by employing sequential surface reactions, wherein the antimicrobial coatings are provided by employing an Atomic Layer Deposition (ALD) process, thermal spray and or aerosol assisted deposition.

The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

A novel deposition method of a metal oxide is provided. The deposition method includes a first step of supplying a first precursor to a chamber; a second step of supplying a second precursor to the chamber; a third step of supplying a third precursor to the chamber; and a fourth step of introducing an oxidizer into the chamber after the first step, the second step, and the third step. The first to third precursors are different kinds of precursors, and a substrate placed in the chamber in the first to fourth steps is heated to a temperature higher than or equal to 300° C. and lower than or equal to decomposition temperatures of the first to third precursors.

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): ##STR00001##
where R.sup.1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R.sup.2 and R.sup.3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z.sup.1 represents an integer of from 1 to 3.

Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.