Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions.

A.sub.2-xB.sub.3-yO.sub.10-z   <Formula 1>

In Formula 1, A, B, x, y, and z are disclosed in the specification.

An organometallic compound, which enables thin-film deposition through vapor deposition, and particularly to a Co or Fe precursor, which is suitable for use in atomic layer deposition or chemical vapor deposition, and a method of preparing the same.

The disclosed technology relates to a structure for use in a metal-insulator-metal capacitor. In one aspect, the structure comprises a bottom electrode formed of a Ru layer. The Ru layer has a top surface characterized by a grazing incidence X-ray diffraction spectrum comprising a first intensity and a second intensity, the first intensity corresponding to a diffracting plane of Miller indices (0 0 2) being larger than the second intensity corresponding to a diffracting plane of Miller indices (1 0 1). The structure further comprises an interlayer on the top surface of the Ru layer, the interlayer being formed of an oxide of Sr and Ru having a cubic lattice structure, and a dielectric layer on the interlayer, the dielectric layer being formed of an oxide of Sr and Ti.

An organometallic compound represented by Chemical Formula 1 may be used in a composition for depositing a thin film including the organometallic compound, where A is derived from a compound represented by Chemical Formula 2:

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Embodiments of the present disclosure include the thin film, a manufacturing method for the thin film using the composition for depositing the thin film, and a semiconductor device including the thin film.

A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr.sub.1-xCa.sub.x).sub.yTiO.sub.3. 0.40x0.90 and 0.90y1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2 of 32 or more and 34 or less to an intensity of a diffraction peak appearing at a diffraction angle 2 of 46 or more and 48 or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-K ray as an X-ray source is 3.00 or more.

Various embodiments of the present technology enable growth of a-axis oriented barium titanate (BTO) films by inserting a relaxed strain control layer having a larger lattice constant than the c-axis of BTO and a similar thermal expansion mismatch. As a result, in-plane tensile stress causes BTO to grow with its ferroelectric polarization in-plane. Some embodiments allow for BTO films to immediately be grown on silicon with a-axis orientation, and without the need to create thick layers for relaxation. Using various embodiments of the present technology, the BTO can be grown in-plane with minimal dislocation density that is confined to the interface region.

A calcium-magnesium-alumino-silicate (CMAS)-reactive thermal barrier coating includes a ceramic coating and a CMAS-reactive overlay coating, wherein the CMAS-reactive overlay coating conforms to a surface of the ceramic coating and comprises a compound that forms a stable high melting point crystalline precipitate when reacted with molten CMAS at a rate that is competitive with CMAS infiltration kinetics into the thermal barrier coating. The ceramic coating phase is stable with the CMAS-reactive overlay coating.

A method of fabricating a flexible transparent conductive electrode layer includes depositing a correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate, annealing the correlated metal film with the UV pulses, and maintaining a temperature of the flexible transparent substrate below 80 C. during the depositing and annealing.

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.