C23C16/409

METHOD OF FORMING TRANSPARENT CORRELATED METAL ELECTRODE
20190103577 · 2019-04-04 · ·

A method of fabricating a flexible transparent conductive electrode layer includes depositing a correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate, annealing the correlated metal film with the UV pulses, and maintaining a temperature of the flexible transparent substrate below 80? C. during the depositing and annealing.

Formation of a lithium comprising structure on a substrate by ALD

A method for the formation of lithium includes a layer on a substrate using an atomic layer deposition method. The method includes the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidizing pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.

Deposition Method, Continuous Deposition System, and Application Thereof

A deposition method, comprising the steps of exposing a carrier to moisture, so that a hydroxy group can be distributed on the surface of the carrier, and adding a liquid precursor to the hydroxy group to perform an alcohol condensation reaction to form a target atom layer or a target atom compound layer of the deposition carrier; the process provided by the present invention allows one or more liquid precursors to be freely selected for uniform deposition on the carrier. Compared to the current low-yield dry atomic deposition technology, it has no limitation on the volume of the reaction chamber, no complicated and diverse process, and can be designed as a continuous process to achieve wider industrial availability.

FILM FORMING METHOD
20180369861 · 2018-12-27 ·

According to an object to offer a film in quality with an industrial advantage, a method of forming a film is suggested. An embodiment of a method of the present invention includes turning a raw-material solution containing an aprotic solvent (that may be lactones or lactams) into a mist or droplets (step of atomization), carrying the mist or droplets into a film-formation chamber onto a base that is arranged in the film-formation chamber (step of carrying the mist), and causing a reaction of the mist or droplets preferably at a temperature that is 250? C. or less to form a film on the base (step of forming a film).

Nonaqueous electrolytic solution secondary battery

The present teaching provides a nonaqueous electrolytic solution secondary battery in which both a satisfactory high-rate characteristic and a high cycle characteristic (prevention of decrease in capacity) are realized. The nonaqueous electrolytic solution secondary battery of the present teaching includes a positive electrode provided with a positive electrode active material layer, a negative electrode provided with a negative electrode active material layer, and a nonaqueous electrolytic solution. The negative electrode active material layer includes a negative electrode active material and carbon black. A coating film made of a lithium transition metal composite oxide having lithium ion conductivity is formed on at least part of a surface of the carbon black.

PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS

The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular the present invention relates to a process comprising bringing a com-pound of general formula (I) into the gaseous or aerosol state L.sub.n-M-X.sub.mL=formula and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, are independent of each other hydrogen, an alkyl group, an aryl group, or a SiA.sub.3 group with A being an alkyl or aryl group, and at least two of R.sup.1, R.sup.2, R.sup.3, R.sup.4 are a SiA.sub.3 group, n is an integer from 1 to 4, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.

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Reactive thermal barrier coating

A calcium-magnesium-alumino-silicate (CMAS)-reactive thermal barrier coating includes a ceramic coating and a CMAS-reactive overlay coating, wherein the CMAS-reactive overlay coating conforms to a surface of the ceramic coating and comprises a compound that forms a stable high melting point crystalline precipitate when reacted with molten CMAS at a rate that is competitive with CMAS infiltration kinetics into the thermal barrier coating. The ceramic coating phase is stable with the CMAS-reactive overlay coating.

Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films

Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

TWO-STEP DEPOSITION PROCESS

The present invention provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises: (i) exposing a substrate to a vapour comprising a first precursor compound in a first chamber to produce a layer of the first precursor compound on the substrate; and (ii) exposing the layer of the first precursor compound to a vapour comprising a second precursor compound in a second chamber to produce the layer of a crystalline material, wherein the pressure in the second chamber is above high vacuum. The invention also provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises exposing a layer of a first precursor compound on a substrate to a vapour comprising a second precursor compound in a chamber to produce the layer of a crystalline material, wherein the pressure in the chamber is greater than high vacuum and less than atmospheric pressure. The invention also provides a process for producing a semiconductor device comprising a layer of a crystalline material, which process comprises producing said layer of a crystalline material by a process as according to the invention.

NONAQUEOUS ELECTROLYTIC SOLUTION SECONDARY BATTERY

The present teaching provides a nonaqueous electrolytic solution secondary battery in which both a satisfactory high-rate characteristic and a high cycle characteristic (prevention of decrease in capacity) are realized. The nonaqueous electrolytic solution secondary battery of the present teaching includes a positive electrode provided with a positive electrode active material layer, a negative electrode provided with a negative electrode active material layer, and a nonaqueous electrolytic solution. The negative electrode active material layer includes a negative electrode active material and carbon black. A coating film made of a lithium transition metal composite oxide having lithium ion conductivity is formed on at least part of a surface of the carbon black.