Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR).sub.n-E)SiH.sub.2—SiH.sub.x(E-(CR).sub.n-E).sub.3-x, wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR).sub.n-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Information about a process for depositing at least one layer on a substrate in a process chamber is obtained via a method including the step of storing actuation data and sensor values as raw data in a log file, together with their time reference. Knowledge about the quality of the deposited layer is obtained by using the raw data. For this purpose, process parameters are obtained from the raw data by means of a computing apparatus. The beginning and the end of the process steps for processing the substrate and their respective types are identified by analyzing the time curve of the process parameters. For at least some of the process steps, characteristic process step quantities corresponding to the particular type of the process steps are calculated from the measured values, and the obtained process step quantities are compared with comparison quantities associated with one or more similar process steps.

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 each independently represent a hydrogen atom, C.sub.1˜C.sub.6 alkyl, halo-C.sub.1˜C.sub.6 alkyl, C.sub.2˜C.sub.5 alkenyl, halo-C.sub.2˜C.sub.5 alkenyl, C.sub.3˜C.sub.10 cycloalkyl, halo-C.sub.3˜C.sub.10 cycloalkyl, C.sub.6˜C.sub.10 aryl, halo-C.sub.6˜C.sub.10 aryl or —Si(R.sub.0).sub.3, and wherein R.sub.0 is C.sub.1˜C.sub.6 alkyl or halo-C.sub.1˜C.sub.6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.

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A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

A controller causes treatment of a substrate with a treating gas by operating an exhaust portion to discharge gas from a treatment space and supplying the treating gas from a treating gas generator to the treatment space. After supplying a dry gas at a treatment flow rate to the treatment space and replacing the gas with the dry gas, the controller carries out a slow leak operation to flow the dry gas from a dry gas supplier in a predetermined direction and to supply the dry gas to a filter in a lower flow rate than the treatment flow rate.

A process for depositing on a surface of a substrate a layer based on a metal oxide doped with magnesium or a mixed metal oxide containing magnesium. The process includes providing a substrate having a surface, forming a gaseous mixture comprising a non-halogenated source of a metal and a source of magnesium, delivering the gaseous mixture to the surface of the substrate, and depositing the layer based on a metal oxide doped with magnesium or a mixed metal oxide containing magnesium on the surface of the substrate.

An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a vessel having an inner volume configured to contain a liquid chemical; an array of sensors configured for detecting a fill level of the liquid chemical disposed within the inner volume, wherein the array of sensors are vertically distributed within the inner volume with an irregular vertical interval between adjacent sensors. The apparatus may also include: an inlet disposed in the vessel and configured for providing a carrier gas into the inner volume; and an outlet disposed in the vessel and configured for dispensing the vapor phase reactant from the inner volume to the reaction chamber. A sensor array for detecting the fill level of a liquid chemical is also disclosed, as well as methods for dispensing a vapor phase reactant to a reaction chamber.

A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.

The present disclosure provides a technique including a method of manufacturing a semiconductor device, which is capable of improving the characteristics of a film formed on a substrate. The method of manufacturing a semiconductor device may include: (a) forming a first film containing a predetermined element, oxygen, carbon and nitrogen on a substrate; and (b) forming a second film thinner than the first film on a top surface of the first film, the second film having an oxygen concentration lower than an oxygen concentration of the first film or having oxygen and carbon concentrations lower than oxygen and carbon concentrations of the first film.