Solid preforms include a solid sublimation material surrounding a support phase. The preforms combine a solid to be sublimated for use in vapor deposition with a compatible support phase allowing the preform to maintain a shape as the solid sublimates. The preforms may be included in ampules for use in vapor deposition systems. The ampules may include one or more of the preforms, and the preforms may be oriented with respect to one another to control flow within the ampule. The preforms may be made via pressing a powder of the solid sublimation material onto the support phase, or by removing a solvent from a solution of the solid sublimation material.

There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.

A vaporizer includes a tank body, a porous member disposed in the vaporizer and heated, a supply tube configured to supply a liquid material to the porous member, and a gas discharge passage configured to discharge a source gas produced by vaporizing the liquid material to the outside. An outlet of the supply tube is disposed in contact with or in close proximity to the porous member. When the outlet is disposed in close proximity to the porous member, a separation distance between the outlet and the porous member is not greater than a distance from the outlet to a bottom of a droplet of the liquid material formed and suspended at the outlet by surface tension.

Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.

In a device and a method for generating vapor in a CVD or PVD device, particles are vaporized by bringing the particles into contact with a first heat transfer surface of a vaporization device. The vapor generated by vaporizing the particles is transported by a carrier gas out of the vaporization device and into a single or multistage modulation device. In a vapor transfer phase, second heat transfer surfaces of the modulation device are adjusted to a first modulation temperature, at which the vapor passes through the modulation device without condensing on the second heat transfer surfaces. At an intermission phase, the second heat transfer surfaces are adjusted to a second modulation temperature, at which at least some of the vapor condenses on the second heat transfer surfaces.

Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may include an ampoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.