Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

The invention is directed to a configurable vaporizer or ampoule assembly that uses a configurable vessel body, assembled from one or more support tray modules with their own individual heating assemblies or heater members, bounded by a base member and a lid member to form the whole ampoule. This eliminates the need for the prior art ampoule body that normally holds the support trays and was used to heat each of the support trays from the exterior surface using heating jackets or the like.

A vaporizer useful for depositing material on a semiconductor substrate in a chamber of a chemical vapor deposition apparatus includes a first inlet configured to receive an atomized precursor, a second inlet configured to receive carrier gas, a flow path in fluid communication with the first and second inlets and configured to effect turbulent flow of an atomized precursor and carrier gas stream supplied to the first and second inlets. A plurality of heating elements includes a first heater element configured to heat a first zone of the flow path and a second heater element configured to heat a second zone of the flow path. An outlet in fluid communication with the flow path is configured to deliver vapor produced from the atomized precursor.

In a method and a device for generating vapor for a CVD or PVD device, liquid or solid particles of a first source material are fed into a first heat transfer body via a first feed line. The first heat transfer body vaporizes the particles into a first vapor, which is transported by a carrier gas from the first heat transfer body into a second heat transfer body arranged after the first heat transfer body. The first heat transfer body is heated to a first temperature, and the second heat transfer body is heated to a second temperature. Liquid or solid particles of a second source material are fed into a second heat transfer body via a second feed line. The second heat transfer body vaporizes the particles into a second vapor, which is transported along with the first vapor out of the second heat transfer body by the carrier gas.

In a device and a method for generating vapor in a CVD or PVD device, particles are vaporized by bringing the particles into contact with a first heat transfer surface of a vaporization device. The vapor generated by vaporizing the particles is transported by a carrier gas out of the vaporization device and into a single or multistage modulation device. In a vapor transfer phase, second heat transfer surfaces of the modulation device are adjusted to a first modulation temperature, at which the vapor passes through the modulation device without condensing on the second heat transfer surfaces. At an intermission phase, the second heat transfer surfaces are adjusted to a second modulation temperature, at which at least some of the vapor condenses on the second heat transfer surfaces.

In a device for generating a vapor for a CVD or PVD apparatus, at least two thermal transfer bodies are arranged successively in the direction of flow of a carrier gas. The device also includes an inlet pipe for feeding an aerosol to one of the thermal transfer bodies for vaporization of the aerosol by bringing the aerosol particles into contact with thermal transfer surfaces of the thermal transfer body. At least one of the thermal transfer bodies has an opening for an inlet pipe that has a first flow channel for feeding the aerosol in and a second flow channel for feeding a carrier gas in. Gas passage openings are provided through which the carrier gas flows out of the second flow channel into the first flow channel. The second flow channel is sealed in the area of the mouth of the inlet pipe.

Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.

Ampoules including a solid volume of the semiconductor chemical precursor and methods of use and manufacturing are described. The solid volume of the semiconductor chemical precursor includes an ingress opening, at least one flow channel, and an outlet passage that are in fluid communication with each other. The solid volume of the semiconductor manufacturing precursor is made of a porous or alternatively a non-porous material. A flow path is defined by at least one flow channel through which a carrier gas flows in contact with the solid volume of the semiconductor chemical precursor.

A vapor phase precursor delivery system for delivering a vapor phase precursor for depositing a layer in a vapor phase deposition apparatus is disclosed. The precursor delivery vessel is constructed and arranged to store a solid precursor and to deliver a vapor phase precursor at a vessel outlet. The system being provided with a plate provided with holes to allow for gas transport between the chamber and the part of the vessel where the solid precursor is stored.