Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

An atomic layer deposition system for depositing thin layers of material onto a common substrate includes a deposition head shaped to define a conical interior cavity into which a conical deposition drum is disposed. Together, the deposition head and the deposition drum define a narrow gap adapted to receive the common substrate, the spacing of the narrow gap being adjustable through acute axial displacement of the deposition head relative to the deposition drum. A pair of rollers advances the substrate through the gap in a first direction, as the deposition head rotates in the opposite direction at a precise rate. Each of the deposition head and deposition drum includes a plurality of separate fluid channels which enable gasses utilized in the deposition process to be delivered into and exhausted from the narrow gap, with the delivery of inert gas on both sides of the substrate effectively creating an air bearing.

A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

An antenna for inductively-coupled plasma is provided. The antenna is configured to be disposed on a predetermined process chamber. The antenna is configured to adjust an oxidizing amount or a nitriding amount of a substrate process in the process chamber by changing a shape thereof. The antenna includes an antenna member disposed on the process chamber. The antenna member has a position where an oxidizing amount or a nitriding amount becomes a predetermined value at each measurement point of the antenna member. The antenna member has a shape formed based on the position of the antenna member obtained at each measurement point.

A deposition apparatus includes a processing chamber, and a susceptor provided in the processing chamber. The susceptor has a recess on a surface of the susceptor. The recess includes a support and a groove, the support supports a region that includes a center of a substrate and that does not include an edge of the substrate, the groove is located around the support, and the groove is recessed relative to the support. The deposition apparatus further includes a process gas supply configured to supply a process gas to the surface of the susceptor and a purge gas supply configured to supply a purge gas to the groove.

The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The exclusion ring includes an alignment structure that cooperates with an alignment structure on a platen on which the exclusion ring will rest during processing of the wafer. The first alignment structure includes a guiding surface which promotes the reception of and positioning of the second alignment structure within the first alignment structure. Methods of utilizing the described exclusion rings are also described.

Some embodiments of the present disclosure provide a technique capable of reducing an amount of deposits on a back surface of a rotary table. According to one aspect thereof, there is provided a technique that includes: a process chamber provided with process regions; a rotary table configured to rotate a substrate about a point outside the substrate such that the substrate sequentially passes through the process regions; and a rotator configured to rotate the rotary table, wherein the process regions include: a first region in which a process gas is supplied; and a second region in which an inert gas is supplied, and wherein a space corresponding to the second region below the rotary table is configured such that a pressure at the space corresponding to the second region below the rotary table is higher than a pressure at a space corresponding to the first region below the rotary table.

A method and apparatus for processing substrates is described herein. In one embodiment, a transfer apparatus is described that includes a blade, a plurality of support arms coupled to the blade, a plurality of grippers coupled to each of the support arms, and a grip actuator operably coupled to the support arms or one or more of the plurality of grippers.

A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.