Methods and apparatus for coating processing reactor component parts are provided herein. In some embodiments, a part coating reactor includes: a lower body and a lid assembly that together define and enclose an interior volume; one or more heaters disposed in the lid assembly; one or more coolant channels disposed in the lid assembly to flow a heat transfer medium therethrough; a plurality of gas passages disposed through the lid assembly to facilitate providing one or more gases to the interior volume, wherein the plurality of gas passages include a plurality of fluidly independent plenums disposed in the lid assembly; and one or more mounting brackets to facilitate coupling a workpiece to the lid assembly.

A method for the production of a graphene layer structure having from 1 to 100 graphene layers, the method comprising providing a substrate having a thermal resistance equal to or greater than that of sapphire, on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100° C., preferably 50 to 60° C., and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, using a laser to selectively ablate graphene from the substrate, wherein the laser has a wavelength in excess of 600 nm and a power of less than 50 Watts.

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b)

A member for a plasma processing apparatus includes a base material and a heat transfer layer provided on one surface of the base material, and the heat transfer layer contains at least one of a fluorine-based resin and a fluorine-based elastomer.

There is provided a method for manufacturing graphene, the method comprising: forming graphene on a non-metallic surface of a substrate by CVD in a CVD reaction chamber, wherein the step of forming graphene comprises introducing a precursor in a gas phase and/or suspended in a gas into the CVD reaction chamber; wherein the precursor consists of one or more compounds selected from a C.sub.4—C.sub.10 organic compound; wherein the organic compound is branched such that the organic compound has at least three methyl groups; and wherein the organic compound consists of carbon and hydrogen and, optionally, oxygen, fluorine, chlorine and/or bromine.

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b).

A cooling assembly includes a first subassembly and a second subassembly. The first subassembly is coupled to a showerhead of a substrate processing system. The first subassembly including a plurality of passages proximate to and in thermal communication with the showerhead. The second subassembly is removably coupled to the first subassembly. The second subassembly includes a plurality of protrusions that align with the plurality of passages, respectively.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

Apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead are provided herein. In some embodiments, a heat transfer system includes a heat transfer plate having a first diameter and a plurality of independent flow paths disposed within the heat transfer plate, each flow path having a first inlet and a first outlet; a supply conduit system having a second inlet fluidly coupled to a plurality of second outlets, wherein each second outlet is fluidly coupled to a corresponding first inlet of the heat transfer plate; and a return conduit system having a third outlet fluidly coupled to a plurality of third inlets, wherein each third inlet is fluidly coupled to a corresponding first outlet of the heat transfer plate, wherein the supply conduit system and the return conduit system are each disposed within an imaginary cylindrical projection above the heat transfer plate.

A shower head according to an embodiment includes: a mixing chamber to which process gas is supplied; a plurality of cooling portions provided below the mixing chamber with a gap therebetween, the cooling portion having a cooling hole provided in a horizontal direction, the process gas being introduced from the mixing chamber to the gaps; a plurality of buffer regions provided below the gaps, the process gas being introduced from the gaps to the buffer regions; and a shower plate provided below the buffer regions, the shower plate having a plurality of through holes disposed at a predetermined interval, the process gas being introduced from the buffer regions to the through holes.