The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

The group III compound substrate manufacturing method of the present invention is a method for manufacturing a group III compound substrate by growing a group III compound crystal (1) by vapor phase epitaxy on a seed crystal (3) placed and fixed on a susceptor (2), the method comprising using a cleavable and separable material for at least one of the susceptor (2) and the seed crystal (3). A group III compound substrate manufactured by the group III compound substrate manufacturing method of the present invention is also provided. The present invention can provide the group III compound substrate manufacturing method which can manufacture a large-sized GaN crystal substrate of higher quality at a low cost while taking advantage of the high film forming rate of the vapor phase epitaxy method, and can provide a substrate manufactured by the method.

A substrate processing apparatus including a reaction chamber with an inlet opening, an in-feed line to provide a reactive chemical into the reaction chamber via the inlet opening, incoming gas flow control means in the in-feed line, the in-feed line extending from the flow control means to the reaction chamber, the in-feed line in this portion between the flow control means and the reaction chamber having the form of an inlet pipe with a gas-permeable wall, the inlet pipe with the gas-permeable wall extending towards the inlet opening through a volume at least partly surrounding the inlet pipe, and the apparatus (100, 800) being configured to provide fluid to surround and enter the inlet pipe in said portion.

A cutting tool including a rake face, a flank face, and a cutting edge portion, comprising a substrate and an AlTiN layer, the AlTiN layer including cubic Al.sub.xTi.sub.1-xN crystal grains, A1 having an atomic ratio x of 0.7 or more and less than 0.95, the AlTiN layer including a central portion, the central portion at the rake face being occupied in area by (200) oriented Al.sub.xTi.sub.1-xN crystal grains at a ratio of 50% or more and less than 80%, the central portion at the cutting edge portion being occupied in area by (200) oriented Al.sub.xTi.sub.1-xN crystal grains at a ratio of 80% or more.

Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied. The second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1≥D1 is satisfied.

The invention discloses a showerhead assembly including a male board with a top surface and a bottom surface and having an injector extending from the bottom surface to inject a first gas; and a female board with a top surface and a bottom surface and having a cavity formed on the top surface. The cavity is communicatively coupled to a gas outlet through which a second gas is guided toward to the outlet. The cavity is configured to receive the first gas from the male board such that the first gas and the second gas mix and then is exhausted via the gas outlet.

Methods for filling a substrate feature with a carbon gap fill, while leaving a void, are described. Methods comprise flowing a process gas into a high density plasma chemical vapor deposition (HDP-CVD) chamber, the chamber housing a substrate having at least one feature, the process gas comprising a hydrocarbon reactant, generating a plasma, and depositing a carbon film.

Provided is a linear movable rotary union including a driving shaft comprising a plurality of fluid supply paths; a hollow middle housing surrounding an outside of the driving shaft and comprising a plurality of first through holes in a sidewall; a plurality of first sealing members provided between the middle housing and the driving shaft to prevent leakage of a fluid; a hollow outer housing surrounding an outside of the middle housing and comprising a plurality of second through holes in a sidewall; and a plurality of second sealing members provided between the middle housing and the outer housing to prevent leakage of the fluid, and wherein the driving shaft is installed to be capable of rotational motion in the middle housing, and the middle housing is installed to be capable of reciprocating motion in an axial direction in the outer housing.

A film deposition apparatus includes a body formed with openings and cavity, a spray assembly, and a gas assembly. The spray assembly sprays a precursor stream into the cavity for forming a film on a substrate. The gas assembly injects one or more gases into the cavity through the openings to shape the precursor stream and improve directionality and utilization of the precursor stream. The film deposition apparatus can operate with one or more plasma generators to form a laminated film on the substrate. The laminated film may have three layers of film: a first film formed through reaction of a first precursor with plasma, a second film being a composite of the first precursor and a second precursor, and a third film formed through sonification of the second precursor on top of the second film. The second precursor can infiltrate into the first film and fill defects therein.

A coated cutting tool includes a substrate and a hard film on coated on the substrate. The hard film contains a complex nitride of Al and Cr. The hard film includes aggregates of columnar grains grown on the substrate along the thickness of the film. The nitride has an Al content of 60 atom % or more, a Cr content of 10 atom % or more, and a total content of Al and Cr of 90 atom % or more relative to the total amount of metal and metalloid elements. The complex nitride has the highest peak intensity assigned to crystal plane (311) of an fcc structure in X-ray diffractometry. In the hard film, the ratio of an X-ray diffraction intensity of plane (311) to the intensities of the other planes is 1.30 or more. A method and a system are also provided for manufacturing the coated cutting tool by chemical vapor deposition.