Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied. The second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1D1 is satisfied.

An oxide film forming method for forming an oxide film on a film formation surface of a target workpiece is provided. The method includes utilizing an oxide film forming device which includes a chamber in which a target workpiece is removably placed; a gas supply unit arranged at a position opposed to the film formation surface of the target workpiece placed in the chamber; and a gas discharge unit arranged to discharge a gas inside the chamber by suction. The gas supply unit has nozzles for supplying of raw material gas, ozone gas and unsaturated hydrocarbon gas with supply ports thereof opposed to the film formation surface of the target workpiece away from the film formation surface. Raw material gas, ozone gas and unsaturated hydrocarbon gas supplied from the respective supply nozzles are mixed in a space between the supply ports and the film formation surface.

A chemical vapor deposition apparatus includes a reaction chamber in which a deposition material is accommodated, a gas supply tube provided in the reaction chamber, and a rotary drive device that rotates the gas supply tube around a rotation axis in the reaction chamber, in which an inside of the gas supply tube is partitioned into the first and second gas flowing sections extending along the rotation axis, a set of gas ejection ports including at least three or more the gas ejection ports disposed, lying next to each other in the circumferential direction is installed on the tube wall, and the set of gas ejection ports includes at least one of a first gas ejection port ejecting the first gas flowing through the first gas flowing section, and at least one of the second gas ejection port ejecting a second gas flowing through the second gas flowing section.

A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600 C. and 2000 C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method.

A thin film deposition system for depositing a thin film on a moveable substrate using atmospheric pressure atomic-layer deposition includes a chamber and a moveable substrate having a levitation stabilizing structure located on the moveable substrate that defines an enclosed interior impingement area of the moveable substrate. A stationary support, located in the chamber, supports the moveable substrate. The stationary support extends beyond the enclosed interior impingement area. A pressurized-fluid source provides a fluid flow through the stationary support that impinges on the moveable substrate within the enclosed interior impingement area of the moveable substrate sufficient to levitate the moveable substrate and expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure.

The invention provides a gas distribution apparatus or injector in a reaction chamber comprising multiple diffusion plates arranged substantially parallel and at least one bump with slopes and substantially flat top/bottom surface to introduce at least two different reaction gases horizontally and separately into the reaction chamber while preventing condensation of adduct formed due to mixture of the reaction gases at a low temperature by avoiding back diffusion. Meanwhile any turbulence or vortex of the reaction gases is not caused because slope shape is formed at the bump.

A gas injector is used in a film deposition apparatus for semiconductor processes. The gas injector comprises a plurality of gas inlets, a plurality of gas flow channels, and a plurality of gas outlets. The gas inlets introduce several kinds of gases into the gas flow channels. The several kinds of gases are delivered to the gas outlets by the gas flow channels. The cross-sectional area of a portion of at least one of the gas flow channels is gradually changed relative to the gas outlets.

Embodiments disclosed herein generally relate to a system, method, and apparatus for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed.

Gas distribution assemblies and processing chambers using same are described. The gas distribution assemblies comprise a cooling plate with a quartz puck, a plurality of reactive gas sectors and a plurality of purge gas sectors suspended therefrom. The reactive gas sectors and purge gas sectors having a coaxial gas inlet with inner tubes and outer tubes, the inner tubes and outer tubes in fluid communication with different gas or vacuum ports in the front faces of the sectors. The sectors may be suspended from the cooling plate by a plurality of suspension rods comprising a metal rod body with an enlarged lower end positioned within a quartz frame with a silicon washer around the enlarged lower end.

A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.