A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.

A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.

A thin film deposition system for depositing a thin film on a moveable substrate using atmospheric pressure atomic-layer deposition includes a chamber and a moveable substrate having a levitation stabilizing structure located on the moveable substrate that defines an enclosed interior impingement area of the moveable substrate. A stationary support, located in the chamber, supports the moveable substrate. The stationary support extends beyond the enclosed interior impingement area. A pressurized-fluid source provides a fluid flow through the stationary support that impinges on the moveable substrate within the enclosed interior impingement area of the moveable substrate sufficient to levitate the moveable substrate and expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure.

A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

A targeted temporal ALD device includes an ALD head that is configured to perform targeted ALD to discrete targeted areas of products/substrates positioned on the mounting surface(s) of the ALD device. The ALD head includes: (i) an outer housing; (ii) an inner housing positioned within the outer housing; and (ii) a plurality of ports formed into the inner housing and outer housing for connecting at least one precursor gas source and at least one inert gas source to the ALD head. The precursor gases are applied to targeted areas of the products/substrates from an inner chamber in the inner housing, while inert gases are applied to an outer chamber between the inner and outer housings to limit/control application of the precursor gases to a desired target area. Some targeted temporal ALD devices are also configured to position/reposition the ALD head in three orthogonal directions relative to product(s)/mounting surface(s).

A substrate processing apparatus including a reaction chamber with an inlet opening, an in-feed line to provide a reactive chemical into the reaction chamber via the inlet opening, incoming gas flow control means in the in-feed line, the in-feed line extending from the flow control means to the reaction chamber, the in-feed line in this portion between the flow control means and the reaction chamber having the form of an inlet pipe with a gas-permeable wall, the inlet pipe with the gas-permeable wall extending towards the inlet opening through a volume at least partly surrounding the inlet pipe, and the apparatus (100, 800) being configured to provide fluid to surround and enter the inlet pipe in said portion.

A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

A nozzle assembly may include a nozzle body defining a longitudinal axis, a central conduit extending through the nozzle body along the longitudinal axis, a first outer annular flow channel extending through the nozzle body, a first electrode positioned radially opposed to a second electrode with respect to the longitudinal axis, an aerosol generator body positioned upstream of the nozzle body, a first chamber formed in the aerosol generator body, a second outer annular flow channel extending through the aerosol generator body, the second outer annular flow channel concentrically surrounding the first chamber about the longitudinal axis, the second outer annular flow channel being radially outward from the longitudinal axis relative to the first chamber.