Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas. The gas flow inlet guide having a flow guide bottom plate having an opening. A top plate is disposed over the flow guide bottom plate and a plasma blocker is disposed over the opening. The plasma blocker includes one or more apertures sized based one or more of a plasma density, an electron temperature, an ion temperature, or a characteristic of a process gas.

There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.

An exterior material for cooking appliance capable of improving durability, heat resistance, scratch resistance, and cleaning performance by forming a Silicon-Diamond like carbon (SiDLC) coating layer including silicon (Si) under a high-temperature environment, and a method for manufacturing the exterior material. The exterior material includes: a base material; and a SiDLC coating layer provided on the base material, wherein the SiDLC coating layer includes Si of about 1 weight % to 50 weight %, carbon (C), and other inevitable impurities.

Embodiments of the present disclosure provide apparatuses for improving gas distribution during thermal processing. In one or more embodiments, an apparatus includes a body, an angled gas source assembly, and a gas injection channel. The gas injection channel has a first half-angle and a second half-angle. The first half-angle is different from the second half-angle. The use of an improved side gas assembly in a processing chamber to direct gas from the center toward the edge of the substrate advantageously controls growth uniformity throughout the substrate. Surprisingly, directing gas through a gas channel with non-uniform half-angles will significantly increase the reaction at or near the edge of the substrate, thereby leading to an improved overall thickness uniformity of the substrate.

Described herein is a technique capable of properly attaching a nozzle to a reaction tube. According to one aspect thereof, there is provided a nozzle installation jig including: a lower plate configured to make contact with a process vessel in a vicinity of a lower end opening of the process vessel in which a nozzle is provided; a frame fixed to the lower plate and extending upward with respect to the lower plate; an upper plate fixed to the frame and provided with a sensor configured to detect a position of the nozzle in the process vessel; and a notification device configured to transmit a notification to an operator according to a detection result of the sensor.

Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

An apparatus for performing a film forming process on a substrate, includes a rotary table, a separation region including a separation gas supply configured to supply a separation gas and a main ceiling surface configured to form a separation gas gap for the separation gas, a central region including a central ceiling surface arranged around the rotation center, a rotary shaft exhaust passage made of a tubular body and connected to the rotary table to rotate the rotary table about the rotation center, the rotary shaft exhaust passage having an exhaust path formed therein, a ceiling surface side exhaust passage formed to vertically penetrate a member constituting the central region, a first exhaust port configured to exhaust the first processing gas to one of the two exhaust passages, and a second exhaust port configured to exhaust the second processing gas to the other one of the two exhaust passages.

There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl.sub.4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl.sub.4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl.sub.4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).

A technique makes it possible to prevent direct contact between a nozzle outer periphery and a nozzle adapter and to prevent generation of particles due to the direct contact. The technique includes: a nozzle that has an attaching portion formed on one end and discharges, into a processing chamber, a gas supplied to the attaching portion; a nozzle adapter that is disposed in the processing chamber and is clearance-fitted to an outer peripheral surface of the attaching portion with a predetermined gap; and a plurality of annular buffer members that is disposed in the attaching portion and abuts on the nozzle adapter, in which at least one of the annular buffer members is compressed and deformed in a radial direction of the corresponding annular buffer member in a state where the attaching portion of the nozzle is attached to the nozzle adapter.