A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.

Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

The present disclosure relates to a gas injector for injecting a process gas in a process chamber. The gas injector comprises an injector tube comprising a plurality of process gas injection holes spaced apart from one another to deliver the process gas in the process chamber. The gas injector also comprises a feed entry of the injector tube for injecting the process gas into the injector tube and a mixing chamber is provided and is configured to mix a first reactant gas and a second reactant gas, thereby forming the process gas. The mixing chamber is directly connected to the feed entry and has first and second inlets for letting the first and second reactant gas in the mixing chamber. The first and second inlets are facing each other to improve mixing in the mixing chamber of the first and second reactant gas.

A plasma generation apparatus includes a housing fitted in a portion of an upper surface of a process chamber of a deposition apparatus and having a protruding portion having an elongated shape in a plan view and protruding upward from a bottom surface, a coil wound around a side surface of the protruding portion and having an elongated shape in the plan view, and an inclination adjustment mechanism configured to independently move upward and downward both ends in a longitudinal direction of the coil to change an inclination of the coil in the longitudinal direction.

A technique capable of improving uniformity of characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect a substrate processing apparatus is provided including: a process chamber for processing a substrate; a substrate support in the process chamber and including a plurality of placement parts for placing the substrate; a rotating part to rotate the substrate support; a heater provided below or within the substrate support; a first nozzle above the placement parts so as to face the placement parts and including a first portion with no hole to thermally decompose a process gas; and a second nozzle above the placement parts and parallel with the first nozzle and including a second portion with no hole to thermally decompose the process gas; and controller for controlling a positional relationship between the substrate and first nozzle via the rotating part.

Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.

A method for synthesizing a diamond by chemical vapor deposition, the method may include heating at least one internal space of at least one hot filament unit; wherein the at least one hot filament unit is positioned in a vacuum chamber; wherein a volume of each internal space out of the at least one internal space is smaller than one half of a volume of the vacuum chamber; feeding at least one gas to the at least one internal space; wherein the at least one gas comprises at least a carbon carrier gas; breaking the at least one gas by the at least one hot filament unit, to provide at least one radical; and depositing the at least one radical on an area of a substrate to provide the diamond.

A furnace includes: a reaction chamber; a wafer boat assembly comprising multiple wafer boats each for bearing a substrate and an input pipeline assembly configured to introduce a gas are arranged in the reaction chamber; the introduced gas at least includes: silicon-containing reaction gas, nitrogen-containing reaction gas, impurity removal reaction gas, and cleaning gas; the input pipeline assembly includes a first gas input pipeline and a second gas input pipeline; the first gas input pipeline is provided with gas injection holes; the second gas input pipeline is formed by an elbow joint and two single pipes; the second gas input pipeline is provided with gas injection holes.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.