Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.

Coated semiconductor wafers are produced by introducing a process gas through first gas inlet openings along a first flow direction into a reactor chamber and over a substrate wafer of semiconductor material lying on a susceptor in order to deposit a layer on the substrate wafer, whereby material derived from the process gas precipitates on a preheat ring arranged around the susceptor; extracting the coated substrate wafer from the reactor chamber; and subsequently removing material precipitate from the preheat ring by introducing an etching gas through the first gas inlet openings into the reactor chamber along the first flow direction over the preheat ring and also through second gas inlet openings between which the first gas inlet openings are arranged, along further flow directions which intersect with the first flow direction.

In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define a volume, a gas distributor disposed around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central exhaust opening having a channel and a rotary actuator disposed along a longitudinal axis thereof, and a plurality of substrate pockets distributed around the central exhaust opening, and an energy source coupled to the bottom.

Embodiments of the present invention provide a liner assembly including an inject insert. The inject insert enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present invention.

The invention relates to a gas injector (10) for supplying gas or a gas mixture to a reaction region (16). The gas injector (10) contains a main part (12) with a gas channel (14). Furthermore, a gas feed (30) is provided for the gas channels (14). The gas or the gas mixture reaches the reaction region (16) from the gas channel (14) via a first opening (26) or a first group (54) of openings (26) in the main part. The main part (12) is equipped with a second opening (27) or a second group (56) of openings (27) via which the gas of the gas mixture likewise reaches the reaction region (16) from the gas channel (14). Each of the openings (26, 27) or the groups (54, 56) of openings (26, 27) is paired with a respective separate gas feed (30, 40) in the main part (12) on the gas channel (14).

Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

A device for atomic layer deposition includes: a film deposition chamber; a stage installed inside the film deposition chamber; a susceptor that holds, on the stage, a substrate; a mask disposed on the substrate, the mask being sized to encompass the substrate; a mask pin that supports the mask; and a mask pin hole bored through the stage and the susceptor vertically, and allows the mask pin to be inserted in a vertically movable manner, wherein the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body and having a height lower than the holding surface, the mask pin hole is opened in the susceptor peripheral edge, and in the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask.