One implementation provides a method including providing a substrate into a processing chamber through a loading port, rotating the substrate clockwise, providing a gas mixture into a processing region through an inject insert comprising a first, second, and third sets of inject inlets, wherein the first set of inject inlets creates an inner zone inside the processing region, the second set of inject inlets creates a middle zone radially outward of the inner zone, and the third set of inject inlets creates an outer zone radially outward the middle zone, the gas mixture is provided by flowing the gas mixture through the first and second sets of inject inlets, and inject inlets of the third set of inject inlets that are away from the loading port, while blocking flow of the gas mixture into inject inlets of the third set of inject inlets that are closer to the loading port.

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

Embodiments of the present disclosure relate to apparatus for improving quality of films deposited on a substrate by a CVD process. More specifically, a branched gas feed assembly uniformly distributes a process gas entering an annular plenum. Each conduit of a first plurality of conduits having substantially equal flow conductance is in fluid communication with one or more conduits of a second plurality of conduits having substantially equal flow conductance. Each conduit of the second plurality of conduits terminates at one of a plurality of outlets. Each outlet of the plurality of outlets is in fluid communication with one or more inlet ports of a plurality of inlet ports formed in the annular plenum. Each inlet port of the plurality of inlet ports is spaced equidistant about a central axis of the annular plenum.

A method includes performing an etching process in a first process module, moving a workpiece formed by the etching process from the first process module to a second process module, and performing a film forming process on the workpiece in the second process module. In the performing the film forming process, an insulating film is formed on a first surface and a second surface of a laminated portion by plasma of a processing gas that contains hydrogen. In the performing the film forming process, an internal pressure of the second process module is 200 mTorr or more, and a hydrogen partial pressure of the second process module is 15 mTorr or less. The performing the etching process, the moving the workpiece, and the performing the film forming process are consistently performed in a state where oxygen is exhausted.

Provided is a Chemical vapor deposition (CVD) equipment including a chamber having an inner space, a plurality of silicon wafers disposed in the inner space of the chamber in an upright position; and a plurality of shower nozzles configured to inject a mixed gas composed of a silicon deposition gas and an impurity gas toward each side edge of the plurality of wafers. The plurality of shower nozzles can be disposed at both sides of the plurality of the plurality of silicon wafers.

Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

A showerhead for vacuum deposition of several species, the showerhead being divided into several quarters containing each at least one outlet for the species, each of the quarter defining the wall of an underlying compartment containing at least one species, wherein two adjacent compartments contains different species. A process for vacuum deposition of one or more species onto a substrate, including providing a substrate for thin film growth in a growth chamber, providing two or more species to be effused towards the substrate, effusing the two or more species towards the substrate with line of sight propagation and in high vacuum conditions, and obtaining a thin film with gradients of chemical elements composition, morphology or crystalline phase.

An atomic-layer-deposition equipment, includes a reaction chamber, a carrier, a coverage mechanism and a dispensing unit. The carrier and the dispensing unit are disposed within a containing space of the reaction chamber. The coverage mechanism includes a connecting shaft and a cover plate, wherein the cover plate is disposed within the containing space and faces the carrier, the connecting shaft is connected to the cover plate and extends through the reaction chamber. The carrier is configured to carry a substrate assembly and move the substrate assembly with respect to the coverage mechanism, so as to allow the cover plate contacting a top surface of the substrate assembly. When the cover plate contacts the top surface of the substrate assembly, the dispensing unit surrounds the substrate assembly and dispenses a precursor to a lateral surface of the substrate assembly, so as to form a protective layer thereon.

A deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus has a processing chamber defining a processing space in which the substrate is arranged, an ultraviolet radiation assembly configured to emit ultraviolet radiation and a microwave radiation assembly configured to emit microwave radiation into an excitation space that can be the same as the processing space, and a gas feed assembly configured to feed a precursor gas into the processing space and a reactive gas into the excitation space. The ultraviolet radiation assembly and the microwave radiation assembly are operated in combination to excite the reactive gas in the excitation space. The material is deposited on the substrate from the reaction of the excited reactive gas and the precursor gas. A method for using the deposition apparatus to deposit a material on a substrate is provided.