The implementations described herein generally relate to the dynamic, real-time control of the process spacing between a substrate support and a gas distribution medium during a deposition process. Multiple dimensional degrees of freedom are utilized to change the angle and spacing of the substrate plane with respect to the gas distributing medium at any time during the deposition process. As such, the substrate and/or substrate support may be leveled, tilted, swiveled, wobbled, and/or moved during the deposition process to achieve improved film uniformity. Furthermore, the independent tuning of each layer may be had due to continuous variations in the leveling of the substrate plane with respect to the showerhead to average effective deposition on the substrate, thus improving overall stack deposition performance.

A gas nozzle according to an embodiment of the present invention includes a columnar main body including a ceramic sintered body having a through hole through which gas flows. An outlet of the through hole for the gas is formed on one end face of the main body. An inner wall of the through hole has a first region located in a vicinity of the outlet, and a second region located further inward of the main body than the first region. The first region and the second region each include a sintered surface of the ceramic sintered body. Average crystal grain size in the first region is larger than average crystal grain size in the second region.

The present invention provides a vacuum processing apparatus capable of reducing attachment of particles generated in a processing space to an inner wall of a chamber, and of easily adjusting pressure in the processing space while introducing a gas into the processing space at a desired flow rate. A vacuum processing apparatus according to one embodiment includes: a container; a gas exhaust portion; a substrate holder configured to retain a substrate; a shield provided to surround the substrate holder and dividing an inside of the container into a processing space and an outside space; a gas introducing portion; a plasma generating portion; and an exhaust portion provided to the shield having a communication path through which the processing space and the outside space communicate, wherein at least part of the communication path is hidden from a region where the plasma generating portion generates the plasma.

Provided is a reaction chamber for a chemical vapor apparatus. The reaction chamber for a chemical vapor apparatus according to the exemplary embodiment of the present invention includes: a housing having an internal space; a susceptor disposed in the internal space and provided so that a substrate is loaded on an upper surface thereof; a showerhead disposed in the internal space to be placed above the susceptor and provided to spray a process gas toward the substrate side; an inner barrel formed in a hollow shape having an open top, an open bottom, and a predetermined height, and being disposed in the internal space so that an upper edge thereof is positioned at a periphery of the showerhead to enclose the substrate and the susceptor; and a driving part connected to the inner barrel via a power transmission part as a medium, wherein, in case of replacing the susceptor and the substrate, a state of the inner barrel is changed into an open state in which the substrate and the susceptor disposed in the inner barrel are exposed to the outside of the inner barrel by an operation of the driving part.

A method of making a semiconductor device includes comparing a thickness profile of a surface of a wafer with a reference value using a control unit. The method further includes transmitting a control signal to an adjustable nozzle based on the comparison of the thickness profile and the reference value. The method further includes rotating the adjustable nozzle about a longitudinal axis of the adjustable nozzle in response to the control signal.

Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed.

There is provided a technique of suppressing unintended substrate processing from being performed after predetermined substrate processing is ended, including a substrate support section that supports a substrate in a processing chamber; a processing gas supply section that supplies a processing gas into the processing chamber; and a moving mechanism that moves the substrate support section in the processing chamber, between a first position to which the processing gas supplied from the processing gas supply section is blown, and a second position to which the processing gas supplied from the processing gas supply section is not blown.

A substrate processing apparatus includes an inner tube configured to accommodate a plurality of substrates and having a first opening portion; an outer tube surrounding the inner tube; a movable wall movably provided in the inner tube or between the inner tube and the outer tube and having a second opening portion; a gas supply part configured to supply a processing gas into the inner tube; an exhaust part provided outside the movable wall and configured to exhaust the processing gas supplied into the inner tube through the first opening portion and the second opening portion; and a pressure detection part configured to detect a pressure inside the inner tube.

Apparatus and methods for supplying a vapor to a processing chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, each with two valves, in fluid communication with an ampoule. A bypass conduit connects the inlet conduit and the outlet conduit. A flow restrictive device restricts flow through the outlet conduit.

A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting cable and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.