A cooling chamber comprising a support plate connected to a cryo pump and turbo pump, a clamp ring with a plurality of clamp pads on the bottom thereof where each clamp pad has a beveled surface directed downward and a lift plate to move the clamp ring from a clamp position to a loading position are described. Cluster tools incorporating the cooling chamber and methods of using the cooling chamber are also described.

The use of Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) applied to powders and intermediates of the MLCC fabrication process can provide significant advantages. Coating metal particles within a defined range of ALD cycles is shown to provide enhanced oxidation resistance. Surprisingly, a very thin ALD layer was found to substantially increase sintering temperature.

A CVD reactor may include a susceptor, process chamber and heat dissipation body. In the CVD reactor, one or more layers can be deposited on one or more substrates. The susceptor is heated by a heating devices. Heat is transported from susceptor, through a process chamber towards the process chamber ceiling, through the process chamber ceiling, and from the process chamber ceiling through a gap space to the heat dissipation body. The temperature of the process chamber ceiling is measured at at least two different azimuth angle positions about a central axis of the process chamber. The radial distance of the respective measurement points or zones from the central axis of the process chamber may be equal to one another. The at least two temperature measurement values are used to produce an average value or a difference value.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a heater heating a substrate in a reaction tube; a temperature controller controlling the heater; a valve controller adjusting an opening degree of a control valve to adjust a gas flow rate; and a main controller instructing a recipe including: (a) elevating an inner temperature of the reaction tube to a predetermined temperature at an elevating rate; (b) processing the substrate at the predetermined temperature; and (c) lowering the inner temperature of the reaction tube at a lowering rate. The main controller controls the temperature controller and the valve controller so that the inner temperature of the reaction tube changes in (a) or (c) at the elevating or lowering rate by heating in parallel with cooling by the gas supplied through the control valve.

In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

A method of controlling a substrate processing apparatus that includes a stage, an annular member, a gas introduction mechanism, an exhaust part and a heat transfer gas introduction supply/exhaust part, the method including: mounting a substrate on the stage, and mounting the annular member on the substrate to press the substrate; creating a pressure of a heat transfer gas to be supplied into a space formed between a rear surface of the substrate and a front surface of the stage using the heat transfer gas supply/exhaust part; supplying the heat transfer gas into the space from the heat transfer gas supply/exhaust part; introducing the gas from the gas introduction mechanism into a container; exhausting the heat transfer gas from the space through an orifice; subsequently, exhausting the heat transfer gas from the space; and removing the annular member from the substrate.

According to embodiments of the present disclosure, a substrate heating device, a substrate heating method, and a method of manufacturing a substrate heater are provided. A substrate heating device for heating a substrate within a processing container configured to perform processing of a substrate therein includes a substrate heater including a placement surface on which the substrate is placed. The substrate heater is configured to heat the substrate placed on the placement surface using a heater. The substrate heating device further includes a jacket provided to cover a bottom portion of the substrate heater via a cooling space and a cooling gas supplier configured to supply a cooling gas to the cooling space.

In the thermal treatment of substrates, a susceptor is used to hold at least one substrate. The susceptor can be heated with a heater and driven in rotation about a rotation axis by a rotary drive. Means are provided to influence the heat transfer to or from the susceptor in a locally limited manner, synchronized with the rotary movement of the susceptor, to equalize local temperature differences on the rotating susceptor. In particular, a temperature control gas with changing heat conduction properties is periodically fed in a pulsed manner through a feed opening into a gap between the susceptor and a cooling unit.

A placement apparatus is provided in the present disclosure. The apparatus includes a stage on which a substrate is placed; a support configured to support the stage from a side of a rear surface of the stage that is opposite to a placement surface on which the substrate is placed; a temperature adjustment member including a plate securing the stage from a lower surface of the stage, a shaft extending downwards from the plate, and a hole accommodating the support through the shaft from the plate, and being capable of a temperature adjustment; a heat-insulating member disposed between the stage and the temperature adjustment member; and an abutment member configured to abut the substrate placed on the stage.

A CVD reactor may include a susceptor, process chamber and heat dissipation body. In the CVD reactor, one or more layers can be deposited on one or more substrates. The susceptor is heated by a heating device. Heat is transported from the susceptor, through a process chamber towards the process chamber ceiling, through the process chamber ceiling, and from the process chamber ceiling through a gap space to the heat dissipation body. The temperature of the process chamber ceiling is measured at at least two different azimuth angle positions about a central axis of the process chamber. The radial distance of the respective measurement points or zones from the central axis of the process chamber may be equal to one another. The at least two temperature measurement values are used to produce an average value or a difference value.