A temperature control method includes a switchover process, an ignition process, a slope calculation process, a first and a second control processes. In the switchover process, a heat medium to be supplied into a flow path is switched from a heat medium of a first temperature supplied from a first temperature controller to a heat medium of a second temperature supplied from a second temperature controller. In the slope calculation process, a slope of temperature change of the heat medium is calculated based on a temperature of the heat medium at an outlet side of the flow path. In the first control process, the second temperature controller is controlled until the temperature of the heat medium is stabilized to a temperature lower than a set value. In the second control process, the second temperature controller is controlled such that the temperature of the heat medium reaches the set value.

A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.

An apparatus comprises a chamber configured to receive a medium. The chamber comprises a first cooled structure having a first surface and a second cooled structure having a first surface. The first surface of the first cooled structure faces the first surface of the second cooled structure and is positioned a predetermined distance therefrom to form a gap, and the gap is configured to receive the medium. The chamber further includes a first gas inlet positioned proximate the center of the first cooled structure, a first slidable structure configured to seal a first side of the chamber when in a closed position, and a second slidable structure, positioned opposite the first slidable structure, and configured to seal a second side of the chamber when in a closed position.

Embodiments of the present disclosure relate to apparatus, systems and methods for managing organic compounds in thermal processing chambers. A gas line can be in fluid communication with the thermal processing chamber and an exhaust pump can be coupled to the thermal processing chamber by an exhaust conduit and controlled by an effluent flow control valve. The apparatus includes a sampling line with an organic compound sensor coupled to the exhaust conduit. The organic compound sensor can be in communication with a control module which can control operating parameters for processing a substrate.

A substrate processing apparatus includes a conductive enclosure having a gas passage, a conductive member having a gas passage, and a piping assembly including a hollow tube having an inner sidewall, a core block disposed in the hollow tube, the core block having an outer sidewall fitting the inner sidewall of the hollow tube, the core block having a first dielectric constant, and at least one dielectric member disposed in at least one of the hollow tube and the core block, the dielectric member having a second dielectric constant higher than the first dielectric constant.

An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

Exemplary temperature modulation methods may include delivering a gas through a purge line extending within a substrate support. The gas may be directed to a backside surface of the substrate support opposite a substrate support surface. The purge line may extend along a central axis of a shaft, the shaft being hermetically sealed with the substrate support. The substrate support may be characterized by a center and a circumferential edge. A first end of the purge line may be fixed at a first distance from the backside surface of the substrate support. The methods may include flowing the gas at a first flow rate via a flow pathway to remove heat from the substrate support to achieve a desired substrate support temperature profile.

The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device.

Condensation on a member of a processing apparatus can be suppressed. A condensation suppressing method of suppressing condensation in a processing apparatus configured to perform a processing on a processing target object includes a first measurement process, a second measurement process and a first control process. In the first measurement process, a first surface temperature of a member of the processing apparatus, which is exposed within a closed space, is measured. In the second measurement process, a dew-point temperature of air within the closed space is measured. In the first control process, a supply amount of low-dew-point air, which has a dew-point temperature lower than a dew-point temperature of air outside the processing apparatus, into the closed space is controlled based on the first surface temperature and the dew-point temperature of the air within the closed space.

A glass laminate includes a glass substrate including a first main surface and a second main surface, an antireflection layer on at least one of the first main surface and the second main surface, and an antifouling layer on the antireflection layer. The antireflection layer includes at least one low refractive index layer and at least one high refractive index layer, and the low refractive index layer and the high refractive index layer being alternately laminated. The antireflection layer includes an outermost layer farthest from the glass substrate and the outermost layer is the low refractive index layer including SiO.sub.2 as a main component. A distribution of fluorine concentration in a thickness direction of the outermost layer, measured by secondary ion mass spectrometry, has a peak.