A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

A gas distribution device for a substrate processing system includes an upper plate including a first hole and a plurality of second holes and a lower plate. The lower plate includes a recessed region formed in one of an upper surface of the lower plate and a lower surface of the upper plate. The recessed region defines a plenum volume between the upper plate and the lower plate. The lower plate further includes a raised fence located within the recessed region. The fence separates the plenum volume into a first plenum and a second plenum, the first plenum is in fluid communication with the first hole, and the second plenum is in fluid communication with the plurality of second holes.

A gas distribution device for a substrate processing system includes an upper plate including a first hole and a plurality of second holes and a lower plate. The lower plate includes a recessed region formed in one of an upper surface of the lower plate and a lower surface of the upper plate. The recessed region defines a plenum volume between the upper plate and the lower plate. The lower plate further includes a raised fence located within the recessed region. The fence separates the plenum volume into a first plenum and a second plenum, the first plenum is in fluid communication with the first hole, and the second plenum is in fluid communication with the plurality of second holes.

Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.

According to one embodiment, a semiconductor manufacturing device according to an embodiment of the present invention includes a chamber; and a stage, wherein the stage comprises: a holding member arranged in the chamber, the holding member having a plurality of convex parts on a surface for mounting a substrate; and a plurality of pins moving up and down in a vertical direction with respect to the holding member, the plurality of lift pins rotating around a rotating shaft parallel to the vertical direction, wherein the plurality of lift pins rotates the substrate around the rotating shaft.

The present disclosure relates to a substrate processing apparatus and method. The substrate processing apparatus and method can sequentially inject process gases onto substrates located in first and second spaces obtained by dividing the internal space of a chamber in the substrate processing apparatus, thereby forming thin films with uniform thicknesses on the substrates located in the first and second spaces.

The present disclosure relates to a substrate processing apparatus and method. The substrate processing apparatus and method can sequentially inject process gases onto substrates located in first and second spaces obtained by dividing the internal space of a chamber in the substrate processing apparatus, thereby forming thin films with uniform thicknesses on the substrates located in the first and second spaces.

Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.