The present invention relates to a copper metal film to be used as a seed layer for electrodeposition for forming a copper interconnect for a semiconductor device, a method for preparing the same, and a method for forming a copper interconnect for a semiconductor device using the copper metal film.

Provided is a method for producing a coating liquid for forming a transparent conductive film, capable of forming a transparent conductive film having excellent transparency and electrical conductivity using a wet-coating method. Disclosed is the method for producing a coating liquid for forming a transparent conductive film, the method including a heating and dissolution step and a dilution step, in which the conditions for heating and dissolution/reaction of the heating and dissolution step are such that the heating temperature is in the range of 130 C.T180 C., and the heating time is in the range shown in FIG. 1.

A process for manufacturing a part provided with a lubricating surface coating (10), in which: a composition is prepared that includes at least one precursor having at least one organic group, the composition is deposited on the part, a heat treatment is carried out, wherein the heat treatment of the coating is carried out at a temperature above 220 C., so as to form a lubricating surface coating (10) formed of an at least partially inorganic solid network incorporating solid carbon in at least one lubricating allotropic form in the dispersed state and trapped within the solid network. A part, such as a foil of a foil bearing (1) obtained by the process, a turbomachine, such as a turbomachine for a fuel cell, including such a part, and an aircraft cabin air-conditioning system including at least one such turbomachine are also described.

A process for providing a substrate having a metal, glass or ceramic surface with a vitreous layer comprising an interference pigment. The process comprises comminuting an interference pigment having at least one dielectric interference layer by a wet grinding process; dispersing the comminuted interference pigment into a silicate-containing suspension to obtain a coating composition; applying the coating composition to the surface by a wet coating process; and densifying the coating composition at a temperature of not more than 650 C.

A copper foil, intended for use as a current collector in a lithium-containing electrode for a lithium-based electrochemical cell, is subjected to a series of chemical oxidation and reduction processing steps to form a field of integral copper wires extending outwardly from the surfaces of the current collector (and from the copper content of the foil) to be coated with a resin-bonded porous layer of particles of active electrode material. The copper wires serve to anchor thicker layers of porous electrode material and enhance liquid electrolyte contact with the electrode particles and the current collector to improve the energy output of the cell and its useful life.

The invention discloses a preparation method of a carbon nitride (CN) electrode material. The preparation method comprises the following steps: (1) preparing a precursor film: immersing a clean conductive substrate A into a hot saturated CN precursor aqueous solution, then immediately taking out, after the surface being dried, a uniform precursor film layer on the conductive substrate A was formed. This step can be repeated several times to get different layers of precursor film on the substrate A; (2) preparing the CN electrode: the dry precursor film obtained in step (1) was encapsulated in a glass tube filled with N.sub.2. Then the glass tube was inserted into a furnace with N.sub.2 atmosphere to calcinate. After calcination, the uniform CN film electrode was obtained. The method provided by the invention is simple and easy to implement, and convenient in used equipment, suitable for industrial application and popularization.

Provided is a film forming device having a structure for easily removing adhered reaction products. The film forming device of the present invention includes a bottom plate (21) detachably provided on the bottom surface of a mist spray head (100). The bottom plate (21) includes a raw material solution opening (35), reaction material openings (36, 37), and inert gas openings (392-394) formed in regions corresponding to a raw material solution ejection port (15), reaction material ejection ports (16, 17), and inert gas ejection ports (192-194), when the bottom plate (21) is attached to the bottom surface of the mist spray head (100).

The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.

A dialkylzinc partial hydrolysate-containing solution which can be handled in air and can form a zinc oxide thin film in air and a method for producing the zinc oxide thin film are provided. The dialkylzinc partial hydrolysate-containing solution contains a partial hydrolysate of dialkyl zinc represented by general formula (1) and a solvent which has a boiling point of 160 C. or higher, an amide structure represented by general formula (2), and which is an organic compound having a cyclic structure. The partial hydrolysate is the dialkylzinc hydrolyzed with water in a molar ratio in the range of 0.4 to 0.9 with respect to zinc in the dialkylzinc. A method for producing the zinc oxide thin film by applying the dialkylzinc partial hydrolysate-containing solution to a base material is also provided.

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A composition is provided which contains an organic zinc compound represented by general formula R.sup.1ZnR.sup.1, in which R.sup.1 represents a linear or branched alkyl group having 1 to 7 carbon atoms, and an organic metal compound containing a metal element whose oxide has a band gap smaller than 3.2 eV. The composition can be used to form a zinc oxide film by a droplet coating method, such as a spray coating method, at a base material temperature of less than 200 C. A method for producing a zinc oxide film involves coating the composition in the form of droplets at a base material temperature of less than 200 C. to form the zinc oxide film. Using this method, it is possible to provide a zinc oxide thin film having an ultraviolet ray absorption ability, excellent visible light permeability, and a thickness of 1 m or less.