A method for forming a metal-organic framework comprising a step of providing a substrate; a single step of forming a single layer of metal oxide formed on the substrate said layer of metal oxide being transformed in whole or in part into metal-organic framework by successive implementation of a plurality of reaction cycles; each reaction cycle of the plurality of reaction cycles comprising: a treatment step with at least one ligand; a treatment step with at least one additive; the reaction cycles being implemented at least twice so as to form the metal-organic framework on the substrate.

Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH.sub.3).sub.x(SiH.sub.2—).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

A method of making a carbon nanotube composite hydrogen evolution catalytic film is provided. The method includes: providing a carbon nanotube film, wherein the carbon nanotube film defines a plurality of spaced holes; providing a precursor solution containing a molybdenum source and a carbon source, and placing the precursor solution on the carbon nanotube film and drying to obtain a precursor film; and energizing the precursor film.

In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

A method for depositing a coating on a continuous carbon or ceramic fiber from a precursor of the coating, the method including at least the heating of at least one segment of the fiber in the presence of a liquid or supercritical phase of the coating precursor by a laser beam so as to bring the surface of the segment to a temperature allowing the formation of the coating on the segment from the coating precursor.

A composition includes a polymer and a solvent. The polymer includes a group (X) which is at least one selected from the group consisting of: a group including at least two cyano groups; a group including —B(OR).sub.2; a group including —PO(OR).sub.2; and a group including —P(OR).sub.2. Each R independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably includes the group (X) at an end of a main chain thereof or at an end of a side chain thereof.

Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.

(RNH.sub.3).sub.2MA.sub.(n−1)M.sup.1.sub.nX.sub.(3n+1)  formula (1), wherein the definitions of R, MA, M.sup.1, X, and n are as defined above.

Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.
(RNH.sub.3).sub.2MA.sub.(n−1)M.sup.1.sub.nX.sub.(3n+1)  formula (1), wherein the definitions of R, MA, M.sup.1, X, and n are as defined above.