Patent classifications
C23C18/1291
Method for coating metallic surfaces with nanocrystalline zinc oxide layers, aqueous compositions therefor and use of the surfaces coated in this way
A method for coating metallic surfaces with an aqueous composition, which contains an aqueous solution of a zinc salt, by flooding, spraying and/or immersion, wherein, for spraying or immersion, the initial temperature of the substrate lies in the range from 5 to 400? C., in that, for flooding, the initial temperature of the substrate lies in the range from 100 to 400? C. and in that an anticorrosive nanocrystalline zinc oxide layer is formed on the metallic surface. Corresponding aqueous composition, the nanocrystalline zinc oxide layer and the use of the coated substrates are also disclosed.
ENABLING ARTIFICIAL THIN FILM MATERIAL STRUCTURES OF NON-LINEAR COMPLEX OXIDE THIN FILMS
Integrated non-linear complex oxide (NLCO) thin film artificial structures include tailored microstructural and crystalline phases for designed material architectures and a method of fabrication. A nano-scale poly crystal-amorphous composite film includes an amorphous matrix surrounding crystalline domains/inclusions of the form of particles, platelets, rods and/or needles, etc. Artificial thin film layered material configurations include bilayers, repeat unit cell bilayers with variable stacking periodicity (N), and multilayers whereby each individual layer, ni, exhibits a different microstructural crystallinity phase state, hence the microstructural phase state is variable in the vertical direction perpendicular to the substrate. NLCO elements can be organized in array configurations. The method to create the integrated NLCO thin film artificial structures combines metal-organic solution deposition (MOSD) film fabrication and microwave irradiation (MWI) processing, is tailorable and creates artificial thin film material structures composed of differing microstructural crystalline phase states simultaneously within a single thermal treatment step.
METHOD FOR MANUFACTURING ATOMIZING UNIT, ATOMIZING UNIT, AND NON-COMBUSTION TYPE FLAVOR INHALER
A method for manufacturing an atomizing unit, comprises a step A of forming an oxide film on a surface of a heating element forming a part of an atomizing unit that atomizes an aerosol source, by supplying electric power to the heating element, in a state where the heating element is processed into a heater shape.
N-H FREE AND SI-RICH PER-HYDRIDOPOLYSILZANE COMPOSITIONS, THEIR SYNTHESIS, AND APPLICATIONS
Solid or liquid NH free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [N(SiH.sub.3).sub.x(SiH.sub.2-).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.
Synthesis of silicon containing materials using liquid hydrosilane compositions through direct injection
An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.
ELECTROLYSIS ELECTRODE AND METHODS OF MANUFACTURE AND USING SAME IN WATER PURIFICATION SYSTEM
A heterojunction anode for electrolysis is disclosed. The anode has a first conductive metal oxide (FCMO) layer, a second semiconductor layer contacting the FCMO layer, and one or more islands of a third semiconductor contacting the second semiconductor layer. The FCMO layer may be formed on a metallic base, such as titanium. The FCMO layer may include iridium, the second semiconductor layer may include titanium oxide, and the third semiconductor may include tin oxide. The anode may be manufactured using spray pyrolysis to apply each semiconductor material. The anode may be configured such that when placed in an electrolyte at least a portion of the second semiconductor layer and the islands are in direct physical contact with the electrolyte. The second semiconductor interlayer and third semiconductor islands enhance the production of reactive chlorine in chlorinated water. A water treatment system and method using the anode are also disclosed.
Production method for electrode for electrolysis
The present invention provides a method for manufacturing an electrolytic electrode, the method capable of appropriately controlling the amount of an electrode catalyst component as desired and also capable of manufacturing a high-performance electrolytic electrode in a cost-effective and efficient way without affecting the electrode performance. A method for manufacturing an electrolytic electrode including a step of forming an electrode catalyst layer on each of a front and a back of a conductive electrode substrate, by applying a coating solution containing a starting material for the electrode catalyst component on the front of the conductive electrode substrate with a plurality of holes, the conductive electrode substrate being expanded mesh or the like, and thereafter drying and firing the coating solution, wherein the substrate contains at least one metal selected from the group consisting of Ti, Ta, Nb, Zr, Hf, and Ni, and alloys thereof, the electrode catalyst component contains at least one selected from the group consisting of Pt, Ir, Ru, Pd, Os, and oxides thereof, and an amount of the electrode catalyst component adhering to the back of the substrate is controlled by preheating the substrate to a temperature higher than room temperature at least once before the coating solution is applied and/or by presetting the temperature to which the substrate is preheated in the electrode catalyst layer-forming step.
Device and method for manufacturing a device with a barrier layer
In various embodiments a method of forming a device is provided. The method includes forming a metal layer over a substrate and forming at least one barrier layer. The forming of the barrier layer includes depositing a solution comprising a metal complex over the substrate and at least partially decomposing of the ligand of the metal complex.
Crystalline organic-inorganic halide perovskite thin films and methods of preparation
A film comprising a crystalline halide perovskite composition having the following formula:
AMX.sub.3(1)
wherein: A is an organic cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, and guanidinium; M is at least one divalent metal; and X is independently selected from halide atoms; wherein the crystalline film of the halide perovskite composition possesses at least one of an average grain size of at least 30 microns, substantial crystal orientation evidenced in an ordering parameter of at least 0.6, and a level of crystallinity of at least 90%. Methods for producing films of these halide perovskite compositions using ionic liquids instead of volatile organic solvents are also described herein.
PATTERNING OF COMPLEX METAL OXIDE STRUCTURES
Various embodiments disclosed relate to methods of manufacturing textured surfaces nanoimprint lithography with nanoparticulate inks. The present invention provides methods that allow flexible patterning of substrates with features having complex geometries.