A method includes applying an infiltration coating on a thermal barrier coating of an article. The infiltration coating infiltrates at least some pores of the thermal barrier coating. The infiltration coating decomposes within the at least some pores of the thermal barrier coating to coat a portion of the at least some pores of the thermal barrier coating. The infiltration coating reduces a porosity of the thermal barrier coating. The method also includes applying a reactive phase spray formulation coating on the thermal barrier coating. The reactive phase spray formulation coating reacts with dust deposits on the thermal barrier coating.

A method for manufacturing a component comprising bombarding nanoparticles in a dispersion with a laser to transform the ligand and cause the nanoparticles to drop out of the dispersion and deposit onto a substrate; and bombarding additional nanoparticles in the dispersion with the laser to transform the ligand and cause the nanoparticles to drop out of the dispersion and deposit onto the nanoparticles previously deposited out of the dispersion.

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH.sub.3)×(SiH.sub.2−).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Provided is a reduction electrode for electrolysis and a manufacturing method thereof, the reduction electrode including a metal substrate and an active layer positioned on at least one surface of the metal substrate, wherein the active layer includes ruthenium oxide, a platinum oxide, and a cerium oxide. When the active layer is uniformly divided into a plurality of pixels, the standard deviation of the composition of ruthenium between the plurality of pixels formed by uniformly dividing the active layer is 0.4 or less, and N atoms in the active layer are present in an amount of 20-60 mol % based on ruthenium.

A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a NH free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising NH free repeating units having the formula [N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

A grain-oriented electrical steel sheet according to an aspect of the present invention includes: a steel sheet 1; an intermediate layer 4 containing Si and O, arranged on the steel sheet; and an insulation coating 3 arranged on the intermediate layer 4, in which the intermediate layer 4 contains a metal phosphide 5, a thickness of the intermediate layer 4 is 4 nm or more, and an abundance of the metal phosphide 5 present is 1% to 30% by cross-sectional area fraction in a cross section of the intermediate layer 4.

A perovskite film, method of preparing thereof, and an optoelectronic device are provided. They are prepared by steps including preparing a mixture containing a first monomer and a second monomer which can be crosslinked in situ; performing an annealing process, and the first monomer and the second monomer are reacted in situ to form a first polymer which combines with the perovskite crystal grains formed by the perovskite precursor and is concentrated at a crystal grain boundary of the perovskite crystal grains to passivate the perovskite crystal grain defects, and then a perovskite film is formed by curing.

The present disclosure relates to a W.sub.18O.sub.49/CoO/NF self-supporting electrocatalytic material and a preparation method thereof, the W.sub.18O.sub.49/CoO/NF self-supporting electrocatalytic material comprises: a foamed nickel substrate, and a W.sub.18O.sub.49/CoO composite nano material generated on the foamed nickel substrate in situ; preferably, wherein the W.sub.18O.sub.49/CoO composite nano material comprises CoO nanosheets attached directly to the foamed nickel substrate, and W.sub.18O.sub.49 nanowires attached to the nanosheets.

A transistor including a substrate, a source, a drain, an active portion, a fin-shaped gate, and an insulation layer is provided. The source is located on the substrate. The drain is located on the substrate. The active portion connects the source and the drain. The fin-shaped gate wraps the active portion. A first portion of the insulation layer separates the fin-shaped gate from the active portion, a second portion of the insulation layer separates the fin-shaped gate from the substrate, a third portion of the insulation layer separates the fin-shaped gate from the source and from the drain, and a fourth portion of the insulation layer is located on a surface of the fin-shaped gate facing away from the active portion. Here, the insulation layer is integrally formed.