According to an embodiment, a method of forming a porous layer includes forming a porous layer containing a noble metal on a surface made of a semiconductor by displacement plating. The plating solution used in the displacement plating contains a noble metal source, hydrogen fluoride, and an adjusting agent adjusting a pH value or zeta potential. The noble metal source produces an ion containing the noble metal in water. The plating solution has a pH value in a range of 1 to 6.

The invention is a metallic coating comprising a first metal, a second metal, phosphorus, and carbon nanoparticles, wherein the carbon is in the form of graphene. In one example, the carbon nanoparticles are selected from a group consisting of graphene nanoplatelets, graphene oxide, and carbon nanotubes. The first metal may preferably be nickel and the second metal may preferably be a refractory metal. The refractory metal may be selected from a group consisting of tungsten, rhenium, molybdenum, niobium, tantalum, and mixtures thereof, and may preferably be tungsten. The metallic coating may include crystallites having a columnar structure. Crystallites comprising the columnar structure precipitate to form grain structures that improve the mechanical strength of the coating through heat treatment.

Plated polymeric gas turbine engine parts and methods for fabricating lightweight plated polymeric gas turbine engine parts are disclosed. The parts include a polymeric substrate plated with one or more metal layers. The polymeric material of the polymeric substrate may be structurally reinforced with materials that may include carbon, metal, or glass. The polymeric substrate may also include a plurality of layers to form a composite layup structure.

An electroless platinum plating solution is disclosed that can be subjected to plating processing with high deposition efficiency, does not self-decompose even when it does not contain sulfur or heavy metals, and has excellent bath stability, and an electroless platinum plating solution that can suppresses out-of-pattern deposition of platinum and perform platinum plating only on a necessary portion. An electroless platinum plating solution is disclosed that contains a soluble platinum salt, a complexing agent and any of a borohydride compound, an aminoborane compound and a hydrazine compound, and has a pH of 7 or more, adding a specific hydroxymethyl compound represented by the following formula (1) or a salt thereof:
R.sup.1CH.sub.2OH(1) wherein R.sup.1 is an atomic group having an aldehyde group or a ketone group.

Various inventions are disclosed in the microchip manufacturing arts. Conductive pattern formation by semi-additive processes are disclosed. Further conductive patterns and methods using activated precursors are also disclosed. Aluminum laminated surfaces and methods of circuit formation therefrom are further disclosed. Circuits formed on an aluminum heat sink are also disclosed. The inventive subject mater further discloses methods of electrolytic plating by controlling surface area of an anode.

Electric tabs and methods for manufacturing are described. A method includes disposing a dielectric layer on a second side of a base material, the base material having a first side and the second side. The method including developing the dielectric layer on the second side of the base material. And, the method including etching the first side of the base material to form an electrode tab.

According to an embodiment, a method of forming a porous layer includes forming a porous layer containing a noble metal on a surface made of a semiconductor by displacement plating. The plating solution used in the displacement plating contains a noble metal source, hydrogen fluoride, and an adjusting agent adjusting a pH value or zeta potential. The noble metal source produces an ion containing the noble metal in water. The plating solution has a pH value in a range of 1 to 6.

The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

A chemically amplified positive-type photosensitive resin composition capable of suppressing occurrence of footing in which the width of the bottom becomes narrower than that of the top in a nonresist section, denaturation of the surface of the metal substrate, and occurrence of a development residue, when a resist pattern serving as a template for a plated article is formed on a metal surface of the substrate having the metal surface by using the composition; a method for manufacturing a substrate with a template by using the composition; and a method for manufacturing a plated article using the substrate with the template. A mercapto compound having a specific structure is contained in the chemically resin composition which includes an acid generator, and a resin whose solubility in alkali increases under the action of acid.

A method for producing a galvanically decorated component with a symbol or structure of a transilluminatable design incorporated in the surface produces the component from an electroplatable plastic in an injection-molding process, and the symbol or structure is produced from a non-electroplatable, electroplating-resistant printed image. The printed image is transferred from a carrier onto the component using thermal transfer by being activated using a laser. A galvanically decorated component is produced by the method.