An article includes an electroless deposited aluminum layer. The aluminum layer is deposited in an electroless plating composition. The composition includes an aluminum ionic liquid, a reducing agent, and an additive selected from the group consisting of a catalyst, an alloying element, and a combination thereof.

Provided is a semiconductor-manufacturing apparatus that forms a plated film having a highly homogeneous thickness on a target surface of a semiconductor wafer through electroless plating. A semiconductor-manufacturing apparatus forms plated films on target surfaces of a plurality of wafers held by a carrier capable of holding the wafers. The semiconductor-manufacturing apparatus includes the following: a rectification mechanism including a rectification plate having a plurality of through-holes, the rectification mechanism being held by the carrier in such a manner that the rectification plate faces the target surface of each wafer; a bath in which a chemical solution for forming each plated film is stored, and in which the carrier, holding the plurality of wafers and the rectification mechanism, is immersed in the chemical solution; and a driver configured to shake the carrier as immersed in the bath with a relative positional relationship between each wafer and the through-holes kept constant.

A wet type processing apparatus includes a processing bath for reserving inside the processing liquid and rendering the resin film pass through the processing liquid; a pair of conveyance members arranged on a loading side for the resin film of the processing bath and on a delivery side for resin film of the processing bath at a position higher than a liquid surface of the processing liquid reserved in the processing bath; and a spouting unit arranged between the pair of the conveyance members at a position lower than the conveyance members and formed with a circumferential surface having plural holes for spouting the processing liquid from the circumferential surface to change a direction of the resin film along the circumferential surface in a non-contact manner in the processing liquid according to spouted flows from the holes.

A method of performing electroless electrochemical atomic layer deposition is provided and includes: providing a substrate including an exposed upper metal layer; exposing the substrate to a first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, where the first precursor solution is an aqueous solution including a reducing agent; subsequent to the forming of the sacrificial metal monolayer, rinsing the substrate; subsequent to the rinsing of the substrate, exposing the substrate to a second precursor solution to replace the sacrificial metal monolayer with a first deposition layer; and subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinsing the substrate. The exposure of the substrate to the first precursor solution and the exposure of the substrate to the second precursor solution are electroless processes.

To provide surface treatment that can reduce occurrence of defects caused by incorporation of dust. Rollers 40 are rotatably fixed to rotating shafts 72 provided to protrude from lateral protective walls 49. The lateral protective walls 49 are fixed perpendicularly to lower protective walls 47 fixed to outer walls 39. Hanging plates 64 of a hanger 50 extend through a space 43 between both lower protective walls 47 and support clips 52. A liquid 41, such as water, is filled in spaces defined by the lateral protective walls 49, the lower protective walls 47, and the outer walls 39. The liquid 41 is filled to cover about half of each rotating shaft 72. Thus, fine dust generated by a transferring mechanism is captured by the liquid 41 and prevented from drifting from the space 34 toward the substrate 54.

A substrate liquid processing apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a processing liquid supply unit 53 configured to supply a processing liquid L1 onto a top surface of the substrate W held by the substrate holding unit 52; and a cover body 6 configured to cover the substrate W. Here, the cover body 6 includes a ceiling unit 61 disposed above the substrate W, a sidewall unit 62 downwardly extended from the ceiling unit 61, and a heating unit 63 provided at the ceiling unit 61 and configured to heat the processing liquid L1 on the substrate W. The sidewall unit 62 of the cover body 6 is placed at an outer periphery side of the substrate W when the processing liquid L1 on the substrate W is heated.

A plating apparatus includes a processing bath configured to store a processing liquid therein, a transporter configured to immerse a substrate holder, holding a substrate, in the processing liquid, raise the substrate holder out of the processing bath, and transport the substrate holder in a horizontal direction, and a gas flow generator configured to generate a clean gas flow forward of the substrate with respect to a direction in which the substrate holder is transported. The transporter moves the gas flow generator together with the substrate holder in the horizontal direction while transporting the substrate holder in the horizontal direction.

A surface treating apparatus that suppresses occurrence of defects is provided. A treatment solution is accumulated in a tank 15 through a treatment solution collecting port/air discharging port 13 in a lower portion of a body 4. An air heated by the treatment solution flows toward an upper portion (portion without the treatment solution) of the tank 15 via the treatment solution collecting port/air discharging port 13 in the lower portion of the body 4, and is discharged via an exhaust duct 17. In this way, the air that is heated and tends to flow upward in the body 4 is discharged from the lower portion thereof and is replaced with an external air from the upper portion thereof. Accordingly, the air in the body 4 can be maintained at a uniform temperature. Thus, the treatment solution that reaches a lower portion of a substrate 54 from an upper portion thereof can be maintained at a uniform temperature. The air is caused to flow toward the lower portion from the upper portion in the body 4, so that the substrate 54 is pulled downward, and swinging of the substrate 54 can thus be reduced. Therefore, the substrate 54 can be less likely to contact an inlet 44 and an outlet 46.

To provide surface treatment that can reduce occurrence of defects caused by incorporation of dust. Rollers 40 are rotatably fixed to rotating shafts 72 provided to protrude from lateral protective walls 49. The lateral protective walls 49 are fixed perpendicularly to lower protective walls 47 fixed to outer walls 39. Hanging plates 64 of a hanger 50 extend through a space 43 between both lower protective walls 47 and support clips 52. A liquid 41, such as water, is filled in spaces defined by the lateral protective walls 49, the lower protective walls 47, and the outer walls 39. The liquid 41 is filled to cover about half of each rotating shaft 72. Thus, fine dust generated by a transferring mechanism is captured by the liquid 41 and prevented from drifting from the space 34 toward the substrate 54.

A technique advantageous for shortening time required for electroless plating that is performed on a substrate is provided. A substrate liquid processing apparatus includes a substrate holder configured to hold the substrate; a reaction acceleration unit, configured to accelerate a plating reaction of an unused electroless plating solution, including an activation unit configured to accelerate the electroless plating solution with respect to the plating reaction and a reaction heater configured to heat the electroless plating solution; and a plating solution supply configured to supply the electroless plating solution to the substrate held by the substrate holder.