A substrate liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid to an upper surface of the substrate held by the substrate holder; a cover body configured to cover the upper surface of the substrate held by the substrate holder; and a gas supply configured to supply an inert gas to a space between the substrate held by the substrate holder and the cover body, the gas supply having a gas supply opening through which the inert gas is discharged. An opening direction of the gas supply opening is directed to a direction other than the upper surface of the substrate held by the substrate holder.

Horizontal methods of electroless metal plating with ionic catalysts have improved plating performance by reducing undesired foaming. The reduced foaming prevents loss of ionic catalyst from the catalyst bath and prevents scum formation which inhibits catalyst performance. The horizontal methods also inhibit ionic catalyst precipitation and improve adhesion of the ionic catalyst to the substrate. The horizontal method can be used to plate through-holes and vias of various types of substrates.

The present application discloses a array substrate, a manufacturing method of the array substrate, and a display panel, the manufacture procedure includes the following steps: sequentially forming a buffer layer and a photoresist layer on a glass substrate; placing the substrate into an activation agent for activation, and forming an activation liquid particle layer with a first preset pattern at a corresponding position where the activation agent is in contact with the photoresist layer, and forming an activation liquid particle layer with a second preset pattern at a corresponding position where the activation agent is in contact with the buffer layer; removing the photoresist layer and the activation liquid particle layer with the first preset pattern; and performing chemical plating to form a first metal layer at a position corresponding to the activation liquid particle layer with the second preset pattern in contact with the buffer layer.

A liquid displacement is performed by supplying a plating liquid onto a substrate 2 while rotating the substrate 2 at a first rotational speed in a state that a pre-treatment liquid remains on a surface of the substrate 2 (liquid displacement process (block S305)). Then, an initial film is formed on the substrate 2 by stopping the rotation of the substrate 2 or by rotating the substrate 2 at a second rotational speed while continuously supplying the plating liquid onto the substrate 2 (incubation process (block S306)). Thereafter, a plating film is grown by rotating the substrate 2 at a third rotational speed while continuously supplying the plating liquid onto the substrate 2 (plating film growing process (block S307)). Here, the first rotational speed is higher than the third rotational speed, and the third rotational speed is higher than the second rotational speed.

A system and method for fabricating a photovoltaic structure is provided. During fabrication, the system can apply a wax coating on at least one surface of a multilayer photovoltaic structure, the surface of the multilayer photovoltaic structure being electrically conductive. The system can then pattern the wax coating using one or more laser beams. The patterned wax coating includes a plurality of openings that expose portions of the electrically conductive surface of the multilayer photovoltaic structure.

A non-uniform initial metal film is non-uniformly deplated to provide a more uniform metal film on a substrate. Electrochemical deplating may be performed by placing the substrate in a deplating bath formulated specifically for deplating, rather than for plating. The deplating bath may have a throwing power of 0.3 or less; or a bath conductivity of 1 mS/cm to 250 mS/cm. Reverse electrical current conducted through the deplating bath non-uniformly. electro-etches or deplates the metal film.

A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.

A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

A laminate including a metallic base material, a first nickel-containing plating film layer formed on the metallic base material, a gold plating film layer formed on the first nickel-containing plating film layer, a second nickel-containing plating film layer formed on the gold plating film layer, and a nickel fluoride film layer formed on the second nickel-containing plating film layer. Also disclosed is a method for producing the laminate as well as a constituent member of a semiconductor production device including the laminate.

A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a fluorinated passive film having a thickness of 8 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.