A film-forming apparatus is connected to a carbon steel cleanup system pipe of a BWR plant. Formic acid and hydrogen peroxide are injected into the circulation pipe of the film-forming apparatus. An iron elution accelerator aqueous solution containing 3000 ppm of formic acid and 1500 ppm of hydrogen peroxide is brought into contact with the inner surface of the cleanup system pipe, and Fe2+ is eluted from the cleanup system pipe by formic acid, and hydroxyl radicals generated from hydrogen peroxide. The film-forming aqueous solution produced from the iron elution accelerator aqueous solution by injecting the nickel formate aqueous solution is brought into contact with the inner surface of the cleanup system pipe, and the Ni ions incorporated into the inner surface by the substitution reaction are reduced by the electrons generated at the time of elution of Fe2+ to form a Ni metal film on the inner surface thereof.

Additive manufacturing processes, such as fused filament fabrication, may be employed to form printed objects in a range of shapes. It is sometimes desirable to form conductive traces upon the surface of a printed object. Conductive traces and similar features may be introduced in conjunction with fused filament fabrication processes by incorporating a metal precursor in a polymer filament having a filament body comprising a thermoplastic polymer, and forming a printed object from the polymer filament through layer-by-layer deposition, in which the metal precursor remains substantially unconverted to metal while forming the printed object. Suitable polymer filaments compatible with fused filament fabrication may comprise a thermoplastic polymer defining a filament body, and a metal precursor contacting the filament body, in which the metal precursor is activatable to form metal islands upon laser irradiation.

Summary

The present application relates to a catalyst for hydrogen evolution reaction (HER) including a transition metal matrix and noble metal atoms formed in the transition metal matrix, in which the noble metal atoms have oxygen adsorbed thereto, and oxygen is derived from the transition metal matrix.

The invention relates to selective deposition of a nickel layer on a copper surface. The invention may be used in the production of electrically conductive areas for electronic circuits. Method for nickel deposition on the surface of copper comprises immersing an item, which surface is to be deposited with the nickel layer, into one or more baths, of which at least one contains a reducing agent and of which at least one is adapted for (electroless) plating of nickel. In order to extend the field of application and to obtain practically pure nickel coatings, said reducing agent comprises boronic or phosphoric compounds, comprising morpholine borane (C.sub.4H.sub.9BNO), or dimethylamine borane (C.sub.2H.sub.7BN), or sodium tetrahydroborate (NaBH.sub.4), or sodium hypophosphite (NaH.sub.2PO.sub.2) and said reducing agent directly or indirectly reduces insoluble copper (I) or copper (II) compounds on the copper surface. At least one of the mention baths comprises a ligand or mixture thereof.

The invention relates to selective deposition of a nickel layer on a copper surface. The invention may be used in the production of electrically conductive areas for electronic circuits. Method for nickel deposition on the surface of copper comprises immersing an item, which surface is to be deposited with the nickel layer, into one or more baths, of which at least one contains a reducing agent and of which at least one is adapted for (electroless) plating of nickel. In order to extend the field of application and to obtain practically pure nickel coatings, said reducing agent comprises boronic or phosphoric compounds, comprising morpholine borane (C.sub.4H.sub.9BNO), or dimethylamine borane (C.sub.2H.sub.7BN), or sodium tetrahydroborate (NaBH.sub.4), or sodium hypophosphite (NaH.sub.2PO.sub.2) and said reducing agent directly or indirectly reduces insoluble copper (I) or copper (II) compounds on the copper surface. At least one of the mention baths comprises a ligand or mixture thereof.

The present invention relates to a catalyst for solid polymer fuel cells in which catalyst particles containing Pt as an essential catalyst metal are supported on a carbon powder carrier. The catalyst has good initial activity and good durability. When the catalyst is analyzed by X-ray photoelectron spectroscopy after potential holding at 1.2 V (vs. RHE) for 10 minutes in a perchloric acid solution, a ratio of zero-valent Pt to total Pt is 75% or more and 95% or less. The present inventive catalyst metal is preferably one obtained by alloying Pt with one of Co, Ni and Fe, and further with one of Mn, Ti, Zr and Sn. In addition, it is preferable that a fluorine compound having a C—F bond is supported on at least the surfaces of catalyst particles in an amount of 3 to 20 mass % based on the total mass of the catalyst.

An aluminum alloy sheet for a magnetic disk, a method for manufacturing same, and a magnetic disk using same. The aluminum alloy sheet is made of an aluminum alloy comprising 0.10 to 3.00 mass % of Fe, 0.003 to 1.000 mass % of Cu, and 0.005 to 1.000 mass % of Zn, with a balance of Al and unavoidable impurities, wherein a value obtained by dividing a difference in an area ratio (%) of second phase particles between a region (A) and a region (B) by an average value of area ratios (%) of second phase particles in the regions (A) and (B) is 0.05 or less, the region (A) being a region from a sheet thickness center plane to a front surface of the sheet, and the region (B) being a region from the sheet thickness center plane to a rear surface of the plate.

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

A method for forming a nickel plated graphene hollow sphere is based on self assembly of graphene under the actions of a rotation force and the van der Waals force, and an electroless nickel plating process performed on the exposed surface of the graphene by means of a hydrothermal method. The method is simple to implement at low cost, and the nickel plated graphene hollow sphere product can be produced with good reproducibility and a high yield. The nickel plated graphene hollow sphere formed by the present method can exhibit good electromagnetic wave absorbing performances of both nickel and graphene, and may have a lower overall density.