The present disclosure provides a metal-resin composite and a method of preparing the same. The metal includes titanium or titanium alloy, the composite includes a metal substrate and a resin layer coated on at least a part of a surface of the metal substrate, recesses are distributed on the part of the surface of the metal substrate coated with the resin layer, a part of resin of the resin layer extends to fill in the recesses, and a concentration of an oxygen element on the surface of the metal substrate is greater than 1 wt %. The method includes dipping a metal substrate in an etching solution containing at least one alkali metal hydroxide so as to form recesses on the surface of the metal substrate, and injecting a resin onto the surface of the after-surface-treatment metal substrate to form a resin layer. The metal-resin composite of the present disclosure is suitable for a shell of an electronic product.

A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

The present invention provides a method for inhibiting a RuO.sub.4 gas generated from a ruthenium-containing liquid in the production process of a semiconductor element. The present invention provides a method for inhibiting a Ru.sub.4 gas generated from a ruthenium-containing liquid by adding an inhibitor for inhibiting the generation of a RuO.sub.4 gas, to a ruthenium-containing liquid. The present invention also provides an inhibitor for inhibiting the generation of a RuO.sub.4 gas, including at least one of a reducing agent and a basic compound.

The present invention provides a method for inhibiting a RuO.sub.4 gas generated from a ruthenium-containing liquid in the production process of a semiconductor element. The present invention provides a method for inhibiting a Ru.sub.4 gas generated from a ruthenium-containing liquid by adding an inhibitor for inhibiting the generation of a RuO.sub.4 gas, to a ruthenium-containing liquid. The present invention also provides an inhibitor for inhibiting the generation of a RuO.sub.4 gas, including at least one of a reducing agent and a basic compound.

A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution containing hydrogen peroxide and a basic solution to produce a nanoscale roughened surface consisting of nanopitting superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration.

A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution containing hydrogen peroxide and a basic solution to produce a nanoscale roughened surface consisting of nanopitting superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration.

The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 Å/min, while minimizing etch rates of dielectrics (<2 Å/min).

The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 Å/min, while minimizing etch rates of dielectrics (<2 Å/min).

Compositions and methods for etching a nanoscale geometry on a metal or metal alloy surface are disclosed. Such surfaces, when included on an implantable medical device, enhance healing after surgery. When included on a bone contacting medical implant, the nanoscale geometry may enhance osseointegration. When included on a tissue contacting device, the nanoscale geometry may enhance endothelial cell attachment, proliferation, and restoration of a healthy endothelial surface.

Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and optionally an amine, one or more chelating agents, and certain dissolved metals, such as component metals of the metal or alloy to be etched and optionally iron. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery.