An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

Described herein is a composition including metal ions consisting essentially of cobalt ions, and a specific monomeric and polymeric suppressing agent including a carboxylic, sulfonic, sulfinic, phosphonic, or phosphinic acid functional groups which show a suppressing effect that is required for void-free bottom-up filling of nanometer-sized recessed features.

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

Described herein is a cobalt electrodeposition composition including cobalt ions, and particular leveling agents including X.sup.1—CO—O—R.sup.11, X.sup.1—SO.sub.2—O—R.sup.11, X.sup.1—PO(OR.sup.11).sub.2, X.sup.1—SO—O—R.sup.11 functional groups, where X.sup.1 is a divalent group selected from (i) a chemical bond (ii) aryl, (iii) C.sub.1 to C.sub.12 alkandiyl, which may be interrupted by O atoms, (iv) an arylalkyl group —X.sup.11—X.sup.12—, (v) an alkylaryl group —X.sup.12—X.sup.11— and (vi) —(O—C.sub.2H.sub.3R.sup.12).sub.mO—, R.sup.11 is selected from H and C.sub.1 to C.sub.4 alkyl. R.sup.12 is selected from H and C.sub.1 to C.sub.4 alkyl, X.sup.12 is a divalent aryl group, and X.sup.11 is a divalent C.sub.1 to C.sub.15 alkandiyl group.

A cobalt electrodeposition composition comprising cobalt ions, and particular leveling agents comprising X.sup.1—CO—O—R.sup.11, X.sup.1—SO.sub.2—O—R.sup.11, X.sup.1—PO(OR.sup.11).sub.2, X.sup.1—SO—O—R.sup.11 functional groups, wherein X.sup.1 is a divalent group selected from (i) a chemical bond (ii) aryl, (iii) C.sub.1 to C.sub.12 alkandiyl, which may be interrupted by O atoms, (iv) an arylalkyl group —X.sup.11—X.sup.12—, (v) an alkylaryl group —X.sup.12—X.sup.11—, and (vi) —(O—C.sub.2H.sub.3R.sup.12).sub.mO—, R.sup.11 is selected from H and C.sub.1 to C.sub.4 alkyl. R.sup.12 is selected from H and C.sub.1 to C.sub.4 alkyl, X.sup.12 is a divalent aryl group, X.sup.11 is a divalent C.sub.1 to C.sub.15 alkandiyl group.

Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.