Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.1−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.1−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

A composition comprising (a) cobalt ions, and (b) an additive of formula I

##STR00001## wherein R.sup.1 is selected from X-Y; R.sup.2 is selected from R.sup.1 and R.sup.3; X is selected from linear or branched C.sub.1 to C.sub.10 alkanediyl, linear or branched C.sub.2 to C.sub.10 alkenediyl, linear or branched C.sub.2 to C.sub.10 alkynediyl, and (C.sub.2H.sub.3R.sup.6O).sub.mH; Y is selected from OR.sup.3, NR.sup.3R.sup.4, N+R.sup.3R.sup.4R.sup.5 and NH(CO)R.sup.3; R.sup.3, R.sup.4, R.sup.5 are the same or different and are selected from (i) H, (ii) C.sub.5 to C.sub.20 aryl, (iii) C.sub.1 to C.sub.10 alkyl (iv) C.sub.6 to C.sub.20 arylalkyl, (v) C.sub.6 to C.sub.20 alkylaryl, which may be substituted by OH, SO.sub.3H, COOH or a combination thereof, and (vi) (C.sub.2H.sub.3R.sup.6O).sub.nH, and wherein R.sup.3 and R.sup.4 may together form a ring system, which may be interrupted by O or NR.sup.7; m, n are integers independently selected from 1 to 30; R.sup.6 is selected from H and C.sub.1 to C.sub.5 alkyl; R.sup.7 is selected from R.sup.6 and

##STR00002##

A composition comprising (a) cobalt ions, and (b) an additive of formula I

##STR00001## wherein R.sup.1 is selected from X-Y; R.sup.2 is selected from R.sup.1 and R.sup.3; X is selected from linear or branched C.sub.1 to C.sub.10 alkanediyl, linear or branched C.sub.2 to C.sub.10 alkenediyl, linear or branched C.sub.2 to C.sub.10 alkynediyl, and (C.sub.2H.sub.3R.sup.6O).sub.mH; Y is selected from OR.sup.3, NR.sup.3R.sup.4, N+R.sup.3R.sup.4R.sup.5 and NH(CO)R.sup.3; R.sup.3, R.sup.4, R.sup.5 are the same or different and are selected from (i) H, (ii) C.sub.5 to C.sub.20 aryl, (iii) C.sub.1 to C.sub.10 alkyl (iv) C.sub.6 to C.sub.20 arylalkyl, (v) C.sub.6 to C.sub.20 alkylaryl, which may be substituted by OH, SO.sub.3H, COOH or a combination thereof, and (vi) (C.sub.2H.sub.3R.sup.6O).sub.nH, and wherein R.sup.3 and R.sup.4 may together form a ring system, which may be interrupted by O or NR.sup.7; m, n are integers independently selected from 1 to 30; R.sup.6 is selected from H and C.sub.1 to C.sub.5 alkyl; R.sup.7 is selected from R.sup.6 and

##STR00002##