In a deposition method of NiPB system plating film, electroplating is performed in a plating bath containing Ni ions, phosphorous acid ions, alkylamine borane, acetic acid, at least one sort of a primary brightening agent, and a secondary brightening agent including at least one sort of a surface active agent. In the above-mentioned plating bath, concentration of alkylamine borane in said plating bath is 1.37 mmol/L or more, and concentration of acetic acid in said plating bath is 0.70 mol/L or more and less than 2.80 mol/L. Thereby, plating film having high hardness of Hv 700 or more can be deposited with high manufacturing efficiency without baking processing, while reducing occurrence of poor appearance, such as burning and abnormal precipitation, even when current density is increased to 80 A/dm.sup.2 or more to raise deposition rate.

Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition.

Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition.

A cobalt electrodeposition composition comprising cobalt ions, and particular leveling agents comprising X.sup.1COOR.sup.11, X.sup.1SO.sub.2OR.sup.11, X.sup.1PO(OR.sup.11).sub.2, X.sup.1SOOR.sup.11 functional groups, wherein X.sup.1 is a divalent group selected from (i) a chemical bond (ii) aryl, (iii) C.sub.1 to C.sub.12 alkandiyl, which may be interrupted by O atoms, (iv) an arylalkyl group X.sup.11X.sup.12, (v) an alkylaryl group X.sup.12X.sup.11, and (vi) (OC.sub.2H.sub.3R.sup.12).sub.mO, R.sup.11 is selected from H and C.sub.1 to C.sub.4 alkyl. R.sup.12 is selected from H and C.sub.1 to C.sub.4 alkyl, X.sup.12 is a divalent aryl group, X.sup.11 is a divalent C.sub.1 to C.sub.15 alkandiyl group.

The invention relates to a composition for electrolytic nickel plating. In order to provide an improved composition, it is proposed that it comprises one or a plurality of nickel ion sources and a mono-, di- or tri-hydroxybenzene compound, preferably a hydroquinone compound or the salts thereof or mixtures thereof.

In a method of manufacturing a Ni plated coating that includes at least one Ni plated layer, an agitation intensity of a plating bath is changed while the Ni plated layer is being electrodeposited to change potential of the deposited Ni plated layer in a deposition depth direction. A Ni plated coating including a D-Ni plated layer and a B-Ni plated layer adjoining the D-Ni plated layer has, other than an interface voltage changing region at an interface between the D-Ni plated layer and the B-Ni plated layer, an in-layer voltage changing region in which, in the D-Ni plated layer or in the B-Ni plated layer, potential is changed in a deposition depth direction at an average rate of 1 mV/0.1 m or greater.

In a method of manufacturing a Ni plated coating that includes at least one Ni plated layer, an agitation intensity of a plating bath is changed while the Ni plated layer is being electrodeposited to change potential of the deposited Ni plated layer in a deposition depth direction. A Ni plated coating including a D-Ni plated layer and a B-Ni plated layer adjoining the D-Ni plated layer has, other than an interface voltage changing region at an interface between the D-Ni plated layer and the B-Ni plated layer, an in-layer voltage changing region in which, in the D-Ni plated layer or in the B-Ni plated layer, potential is changed in a deposition depth direction at an average rate of 1 mV/0.1 m or greater.

Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

A deposition mask includes a mask body and a through-hole provided in the mask body and through which a deposition material passes when the deposition material is deposited on a deposition target substrate. The mask body satisfies y950 and y23x1280 when an indentation elastic modulus is x (GPa) and a 0.2% yield strength is y (MPa). When the mask body satisfies these inequalities, the generation of recesses during ultrasonic cleaning of the mask can be suppressed.