An electro-conductive paste which includes an electro-conductive powder, a multiple oxide containing tellurium oxide, and an organic vehicle. The electro-conductive paste contains 0.1 parts by weight to 10 parts by weight of the multiple oxide based on 100 parts by weight of the electro-conductive powder, and the content ratio of the tellurium oxide in 100% by weight of the multiple oxide as TeO.sub.2 is 3% by weight to 30% by weight.

An electro-conductive paste which includes an electro-conductive powder, a multiple oxide containing tellurium oxide, and an organic vehicle. The electro-conductive paste contains 0.1 parts by weight to 10 parts by weight of the multiple oxide based on 100 parts by weight of the electro-conductive powder, and the content ratio of the tellurium oxide in 100% by weight of the multiple oxide as TeO.sub.2 is 3% by weight to 30% by weight.

A light emitting device includes a light emitting diode (LED); a transparent optic having a refractive index n.sub.optic; and a phosphor layer spaced apart from the LED and positioned between the LED and the transparent optic. The phosphor layer has an effective refractive index n.sub.phosphor, where a gap between the LED and the phosphor layer has a refractive index n.sub.gap that is less than n.sub.phosphor. The transparent optic has an inner convex surface in contact with the phosphor layer. The inner convex surface has an inner radius of curvature r; and an outer convex surface facing away from the phosphor layer and being a surface through which the light emitting device emits light into a medium adjacent the outer convex surface. The medium has a refractive index n.sub.medium. The outer convex surface has an outer radius of curvature R, such that r/R is equal to n.sub.medium/n.sub.optic.

The present invention relates to a divalent manganese-doped all-inorganic perovskite quantum dot glass, and constituents of the divalent manganese-doped all-inorganic perovskite quantum dot glass are as follows: B.sub.2O.sub.3: 25%-45%, SiO.sub.2: 25%-45%, MCO.sub.3: 1%-10%, Al.sub.2O.sub.3: 1%-10%, ZnO: 1%-5%, Cs.sub.2CO.sub.3: 1%-10%, PbCl.sub.2: 1%-10%, NaCl: 1%-10%, MnCl.sub.2: 1%-10%, wherein M is Ca, Sr or Ba. Preparation of the quantum dot glass is as follows: grinding each raw constituent materials and mixing well to form a mixture, melting the mixture, followed by molding, annealing and performing thermal treatment. By the thermal treatment at different temperatures, a divalent manganese-doped quantum dot glass can be obtained. The divalent manganese ions doped perovskite quantum dot glass is a kind of light-emitting material with great application prospect, for possessing good stability and rather high fluorescence quantum yield.

The invention relates to a glass frit being a mixture of a first glass frit comprising tellurium oxide and bismuth oxide as main components and a second glass frit comprising tellurium oxide and lead oxide as main components, wherein the mixture of the first glass frit and the second glass frit comprises 40 to 55% by weight of tellurium oxide, 15 to 25% by weight of lead oxide and 5 to 15% by weight of bismuth oxide. The invention further relates to a conductive paste for forming electrodes on a semiconductor substrate, the paste comprising 85 to 92% by weight of an electrically conductive metal, 1.5 to 3.5% by weight of the glass frit and organic medium. The conductive paste is used for forming electrically conductive grid lines on semiconductor substrates for solar cells.

The disclosure relates to a glass and a melt solder for the passivation of semiconductor components, the use of the glass or the melt solder for the passivation of semiconductor components, a passivated semiconductor component and a method for passivating semiconductor components.

A resistive composition that can form a thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The resistive composition of the present invention includes: ruthenium-based conductive particles including ruthenium dioxide; a glass frit that is essentially free of a lead component; and an organic vehicle, wherein the glass frit is a glass frit which is constituted such that in a case where a fired product of a mixture of the glass frit and the ruthenium dioxide has in a range of 1 k/ to 1 M/, the fired product exhibits a temperature coefficient of resistance in a plus range.

A resistive composition that can form a thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The resistive composition of the present invention includes: ruthenium-based conductive particles including ruthenium dioxide; a glass frit that is essentially free of a lead component; and an organic vehicle, wherein the glass frit is a glass frit which is constituted such that in a case where a fired product of a mixture of the glass frit and the ruthenium dioxide has in a range of 1 k/ to 1 M/, the fired product exhibits a temperature coefficient of resistance in a plus range.

A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100 / to 10 M/ and a temperature coefficient of resistance within 100 ppm/ C.

A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100 / to 10 M/ and a temperature coefficient of resistance within 100 ppm/ C.