A dielectric ceramic composition includes a barium titanate (BaTiO.sub.3)-based base material main ingredient and an accessory ingredient, the accessory ingredient including dysprosium (Dy) and praseodymium (Pr) as first accessory ingredients. A content of the Pr satisfies 0.233 mol≤Pr≤0.699 mol, based on 100 mol of the barium titanate base material main ingredient.

A dielectric ceramic composition includes a barium titanate (BaTiO.sub.3)-based base material main ingredient and an accessory ingredient, the accessory ingredient including dysprosium (Dy) and praseodymium (Pr) as first accessory ingredients. A content of the Pr satisfies 0.233 mol≤Pr≤0.699 mol, based on 100 mol of the barium titanate base material main ingredient.

A dielectric ceramic composition includes a barium titanate (BaTiO.sub.3)-based base material main ingredient and an accessory ingredient, the accessory ingredient including dysprosium (Dy) and praseodymium (Pr) as first accessory ingredients. A content of the Pr satisfies 0.233 mol≤Pr≤0.699 mol, based on 100 mol of the barium titanate base material main ingredient.

A dielectric ceramic composition includes a barium titanate (BaTiO.sub.3)-based base material main ingredient and an accessory ingredient, the accessory ingredient including dysprosium (Dy) and praseodymium (Pr) as first accessory ingredients. A content of the Pr satisfies 0.233 mol≤Pr≤0.699 mol, based on 100 mol of the barium titanate base material main ingredient.

A dielectric composition includes main phases and Ca-RE-Si—O segregation phases. The main phases include a main component expressed by ABO.sub.3. “A” includes at least one selected from barium and calcium. “B” includes at least one selected from titanium and zirconium. “RE” represents at least one of rare earth elements. A molar ratio of (Si/Ca) is larger than one. A molar ratio of (Si/RE) is larger than one, provided that the molar ratio of (Si/RE) is a molar ratio of silicon included in the segregation phases to the rare earth elements included therein. An average length of major axes of the segregation phases is 1.30-2.80 times as large as an average particle size of the main phases. An average length of minor axes of the segregation phases is 0.21-0.48 times as large as an average particle size of the main phases.

A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers including Ni as a main phase are alternately stacked. At least one of the plurality of dielectric layers includes a secondary phase including Si, at an interface between the at least one of the plurality of dielectric layers and one of the plurality of internal electrode layers next to the at least one of the plurality of dielectric layers. The one of the plurality of internal electrode layers includes a layer including an additive element including one or more of Au, Pt, Cu, Fe, Cr, Zn, and In, at a region contacting the secondary phase at the interface.

Disclosed is a polycrystalline ceramic dielectric comprising: crystal grain bulks made of a barium titanate-based ceramic; and grain boundaries comprising interfaces between the crystal grain bulks, wherein the composition of the grain boundaries is controlled using dopants. By controlling the grain boundary composition using dopants so that the dopants are distributed across a width of 5 nm or less and using a nano-sized, fine-grained barium titanate-based ceramic precursor, the grain boundary structure within the polycrystals may maintain electroneutrality, and their ferroelectricity may be controlled, thereby allowing for smoother polarization reaction. Accordingly, the present disclosure provides polycrystalline ceramic dielectrics that have dielectric properties such as high permittivity and low dielectric losses in a wide frequency range, a small amount of reduction in electric field-dependent relative permittivity, high temperature stability, non-reducibility under a reduction sintering condition, and resulting high insulation resistance, and a preparation method therefor.

A multilayer capacitor includes a body including a dielectric layer and first and second internal electrodes stacked on each other and having the dielectric layer interposed therebetween; a pair of first external electrodes respectively disposed on first and second corners of the body, which are not adjacent to each other, and connected to the first internal electrode; a pair of second external electrodes respectively disposed on third and fourth corners of the body, which are not adjacent to each other, and connected to the second internal electrode; and a reinforcing portion disposed on a surface of the body, not covered by at least one of the first and second external electrodes, and including a sintered ceramic body.

A multilayer capacitor includes a body including a dielectric layer and first and second internal electrodes stacked on each other and having the dielectric layer interposed therebetween; a pair of first external electrodes respectively disposed on first and second corners of the body, which are not adjacent to each other, and connected to the first internal electrode; a pair of second external electrodes respectively disposed on third and fourth corners of the body, which are not adjacent to each other, and connected to the second internal electrode; and a reinforcing portion disposed on a surface of the body, not covered by at least one of the first and second external electrodes, and including a sintered ceramic body.

A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer has a perovskite structure represented by a general formula ABO.sub.3 as a main phase, and includes a region in which Dy is dissolved. In the region in which Dy is dissolved, an atomic ratio of a content of Dy dissolved in an A-site of the perovskite structure to a content of Dy dissolved in a B-site is 1.6 or more and 2.0 or less.