A piezoelectric ceramic speaker includes a piezoelectric element using a vibration sheet formed with piezoelectric ceramic having a primary phase constituted by ceramic grains of perovskite crystal structure containing Pb, Nb, Zn, Ti, and Zr, and a secondary phase constituted by ZnO grains, wherein the primary phase is constituted by ceramic grains expressed by a composition formula Pb {(Zr.sub.(1-a)Ti.sub.a).sub.x.Math.(Ni.sub.1/3Nb.sub.2/3).sub.y.Math.(Zn.sub.1/3Nb.sub.2/3).sub.z}O.sub.3 (where 0<x0.85, 0y<1, 0<z<1, x+y+z=1, and 0.45a0.60); and an enclosure which encloses the piezoelectric element.

A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.

A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.

A piezoelectric thin film is formed by adding a donor element to lead zirconate titanate. In the piezoelectric thin film, a molar ratio of lead to a total sum of zirconium and titanium is 105% or higher, and, when positive and negative coercive electric fields in polarization and electric field hysteresis are referred to as Ec (+) and Ec (?), respectively, a value of |Ec (+) |/|Ec (?) | is 0.5 or more and 1.5 or less.

A ceramic-wound-capacitor includes a first-electrically-conductive-layer, a dielectric-layer, a second-electrically-conductive-layer, and a protective-coating. The dielectric-layer is formed of an antiferroelectric lead-lanthanum-zirconium-titanate. The protective-coating has a thickness of less than ten micrometers (10 m) and provides electrical isolation between the first-electrically-conductive-layer and the second-electrically-conductive-layer of the ceramic-wound-capacitor. A method for fabricating the ceramic-wound-capacitor includes the steps of feeding a carrier-strip, depositing a sacrificial layer, depositing a first-electrically-conductive-layer, depositing a dielectric-layer, and depositing a second-electrically-conductive-layer to form an arrangement coupled to the carrier-strip by the sacrificial-layer, separating the arrangement from the carrier-strip and sacrificial-layer, creating an exposed-surface of the first-electrically-conductive-layer, applying a protective-coating to the exposed-surface of the first-electrically-conductive-layer, winding the arrangement with the protective-coating to form a ceramic-wound-capacitor, where the protective-coating is in direct contact with the first-electrically-conductive-layer and the second-electrically-conductive-layer of the ceramic-wound-capacitor.

A piezoelectric material composition may be represented by Equation 1,

[00001]$\begin{array}{cc}0.96\left({\mathrm{Na}}_a{K}_{1-a}\right)\left({\mathrm{Nb}}_b\left(T_{1-b}\right)\right)O_3-\left(0.04-x\right)M_A{M}_B{O}_3-x\left({\mathrm{Bi}}_c{\mathrm{Ag}}_{1-c}\right)M_B{O}_3+d\mathrm{mol}\%A& \left[\mathrm{Equation}1\right]\end{array}$ where T is Sb, Ta, or V, M.sub.A is Sr, Ba, or Ca, M.sub.B is Zr, Hf, Ti, or Sn, and A is Fe.sub.2O.sub.3, Co.sub.2O.sub.3, Mn.sub.2O.sub.3, ZnO, GeO.sub.2, CuO, or NiO, and 0.40?a?0.60, 0.90?b?1.00, 0.30?c?0.70, 0.00?x?0.04, and 0.00<d?1.00.

A piezoelectric material composition may be represented by Equation 1,

[00001]$\begin{array}{cc}0.96\left({\mathrm{Na}}_a{K}_{1-a}\right)\left({\mathrm{Nb}}_b\left(T_{1-b}\right)\right)O_3-\left(0.04-x\right)M_A{M}_B{O}_3-x\left({\mathrm{Bi}}_c{\mathrm{Ag}}_{1-c}\right)M_B{O}_3+d\mathrm{mol}\%A& \left[\mathrm{Equation}1\right]\end{array}$ where T is Sb, Ta, or V, M.sub.A is Sr, Ba, or Ca, M.sub.B is Zr, Hf, Ti, or Sn, and A is Fe.sub.2O.sub.3, Co.sub.2O.sub.3, Mn.sub.2O.sub.3, ZnO, GeO.sub.2, CuO, or NiO, and 0.40?a?0.60, 0.90?b?1.00, 0.30?c?0.70, 0.00?x?0.04, and 0.00<d?1.00.

A piezoelectric ceramic plate which is slightly deformed by firing, includes a plate-shaped substrate, and an electronic component. The piezoelectric ceramic plate has a pair of main surfaces, a pair of opposing first side surfaces, and a pair of opposing second side surfaces. The pair of first side surfaces are baked surfaces, and the distance between the pair of first side surfaces measured at the center in the longitudinal direction is denoted by Lc and the distance between the pair of first side surfaces measured at ends in the longitudinal direction is denoted by Le. The ratio of the difference L between Le and Lc to Lc (L/Lc) is 1.0% or less. The piezoelectric ceramic plate is suitably used as a piezoelectric ceramic plate having an area of each of the main surfaces of 360 mm.sup.2 or more and a thickness of 150 m or less.

A piezoelectric ceramic plate which is slightly deformed by firing, includes a plate-shaped substrate, and an electronic component. The piezoelectric ceramic plate has a pair of main surfaces, a pair of opposing first side surfaces, and a pair of opposing second side surfaces. The pair of first side surfaces are baked surfaces, and the distance between the pair of first side surfaces measured at the center in the longitudinal direction is denoted by Lc and the distance between the pair of first side surfaces measured at ends in the longitudinal direction is denoted by Le. The ratio of the difference L between Le and Lc to Lc (L/Lc) is 1.0% or less. The piezoelectric ceramic plate is suitably used as a piezoelectric ceramic plate having an area of each of the main surfaces of 360 mm.sup.2 or more and a thickness of 150 m or less.

A hard lead zirconate titanate (PZT) ceramic of the general structure ABO3 is specified, wherein the PZT ceramic has doping with Mn on the B sites and doping with Cu on the A sites and/or on the B sites. A process for producing a ceramic material and an electroceramic component are moreover specified.