C04B35/493

PIEZOELECTRIC CERAMIC, METHOD FOR THE PRODUCTION THEREOF AND ELECTROCERAMIC COMPONENT COMPRISING THE PIEZOCERAMIC

A hard lead zirconate titanate (PZT) ceramic of the general structure ABO3 is specified, wherein the PZT ceramic has doping with Mn on the B sites and doping with Cu on the A sites and/or on the B sites. A process for producing a ceramic material and an electroceramic component are moreover specified.

MODULE
20190116687 · 2019-04-18 ·

The present invention relates to a module (1) which comprises a power semiconductor device (2) and a ceramic capacitor (3) which is configured for cooling the power semiconductor device (2).

MODULE
20190116687 · 2019-04-18 ·

The present invention relates to a module (1) which comprises a power semiconductor device (2) and a ceramic capacitor (3) which is configured for cooling the power semiconductor device (2).

Low-temperature co-firing of multilayer textured piezoelectric ceramics with inner electrodes

Textured PMN-PZT fabricated by templated grain growth (TGG) method has a piezoelectric coefficient (d) of 3 to 5 times that of its random counterpart. By combining this TGG method with low-temperature co-firing ceramics (LTCC) techniques, co-fired multilayer textured piezoelectric ceramic materials with inner electrodes were produced at a temperature as low as 925 C., which silver could be used. Trilayer PMN-PZT ceramics prepared by this method show a strain increase of 2.5 times, a driving voltage decrease of 3 times, and an equivalent piezoelectric coefficient (d*) improvement of 10 to 15 times that of conventional random ceramic counterparts. Further, a co-fired magnetostrictive/piezoelectric/magnetostrictive laminate structure with silver inner electrode was also synthesized. The integration of textured piezoelectric microstructure with the cost-effective low-temperature co-fired layered structure achieves strong magnetoelectric coupling. These new materials have promising applications including as actuators, ultrasonic transducers, and use in energy harvesters.

Low-temperature co-firing of multilayer textured piezoelectric ceramics with inner electrodes

Textured PMN-PZT fabricated by templated grain growth (TGG) method has a piezoelectric coefficient (d) of 3 to 5 times that of its random counterpart. By combining this TGG method with low-temperature co-firing ceramics (LTCC) techniques, co-fired multilayer textured piezoelectric ceramic materials with inner electrodes were produced at a temperature as low as 925 C., which silver could be used. Trilayer PMN-PZT ceramics prepared by this method show a strain increase of 2.5 times, a driving voltage decrease of 3 times, and an equivalent piezoelectric coefficient (d*) improvement of 10 to 15 times that of conventional random ceramic counterparts. Further, a co-fired magnetostrictive/piezoelectric/magnetostrictive laminate structure with silver inner electrode was also synthesized. The integration of textured piezoelectric microstructure with the cost-effective low-temperature co-fired layered structure achieves strong magnetoelectric coupling. These new materials have promising applications including as actuators, ultrasonic transducers, and use in energy harvesters.

Ceramic material and capacitor comprising the ceramic material

A ceramic material for capacitors using multilayer technology of formula (I): Pb.sub.(11.5a)A.sub.aB.sub.b(Zr.sub.1xTi.sub.x).sub.(1cdef)C.sub.eSi.sub.cO.sub.3+y.Math.PBO wherein A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb; C is selected from the group consisting of Ni and Cu; and 0<a<0.12, 0.05x0.3, 0c<0.12, 0.001<e<0.12 and 0y<1.

Ceramic material and capacitor comprising the ceramic material

A ceramic material for capacitors using multilayer technology of formula (I): Pb.sub.(11.5a)A.sub.aB.sub.b(Zr.sub.1xTi.sub.x).sub.(1cdef)C.sub.eSi.sub.cO.sub.3+y.Math.PBO wherein A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb; C is selected from the group consisting of Ni and Cu; and 0<a<0.12, 0.05x0.3, 0c<0.12, 0.001<e<0.12 and 0y<1.

Piezoelectric/electrostrictive material, piezoelectric/electrostrictive body, and resonance driving device

A piezoelectric/electrostrictive material is composed of Mn and a compound of Pb(Zn, Nb)O.sub.3Pb(Ni, Nb)O.sub.3Pb(Zr, Ti)O.sub.3. A ratio of a molar amount of Mn relative to a sum of respective molar amounts of Ni, Zn, Ti, Zr, Nb and Mn is at least 0.001 to no more than 0.015. A ratio of a molar amount of Nb relative to a sum of respective molar amounts of Ni and Zn is at least 2.007 to no more than 2.125.

Piezoelectric/electrostrictive material, piezoelectric/electrostrictive body, and resonance driving device

A piezoelectric/electrostrictive material is composed of Mn and a compound of Pb(Zn, Nb)O.sub.3Pb(Ni, Nb)O.sub.3Pb(Zr, Ti)O.sub.3. A ratio of a molar amount of Mn relative to a sum of respective molar amounts of Ni, Zn, Ti, Zr, Nb and Mn is at least 0.001 to no more than 0.015. A ratio of a molar amount of Nb relative to a sum of respective molar amounts of Ni and Zn is at least 2.007 to no more than 2.125.

Piezoelectric ceramic, manufacturing method therefor, and electronic component

A piezoelectric ceramic may be slightly deformed by firing, and a manufacturing method therefor, and an electronic component are disclosed. There is provided a piezoelectric ceramic including a plurality of crystal grains including a lead zirconate titanate-type crystal containing Zn, and Bi, and crystal grain boundaries existing between a plurality of the crystal grains, wherein a plurality of the crystal grains include first crystal grains, and wherein the first crystal grains have a content of at least one element of Zn and Bi present in the inside of the first crystal grains that is smaller than the content of the at least one element present in an area including the crystal grain boundaries that are in contact with the crystal grains. The piezoelectric ceramic is slightly deformed by firing and is capable of forming an electronic component which has little warp or deformation even if it is thin.