A piezoelectric composition having a complex oxide including potassium and niobium, in which the complex oxide has a first phase represented by a compositional formula KNbO.sub.3, and one or two phases selected from a second phase represented by a compositional formula K.sub.4Nb.sub.6O.sub.17 and a third phase represented by a compositional formula KNb.sub.3O.sub.8.

The present invention relates to a method of preparing a solid solution ceramic material having increased electromechanical strain, as well as ceramic materials obtainable therefrom and uses thereof. In one aspect, the present invention provides a method A method of increasing electromechanical strain in a solid solution ceramic material which exhibits an electric field induced strain derived from a reversible transition from a non-polar state to a polar state; i) determining a molar ratio of at least one polar perovskite compound having a polar crystallographic point group to at least one non-polar perovskite compound having a non-polar crystallographic point group which, when combined to form a solid solution, forms a ceramic material with a major portion of a non-polar state; ii) determining the maximum polarization, P.sub.max, remanent polarisation, P.sub.r, and the difference, P.sub.max−P.sub.r, for the solid solution formed in step i); and either: iii)a) modifying the molar ratio determined in step i) to form a different solid solution of the same perovskite compounds which exhibits an electric field induced strain and which has a greater difference, P.sub.max−P.sub.r, between maximum polarization, P.sub.max, and remanent polarisation, P.sub.r, than for the solid solution from step i), or; iii)b) adjusting the processing conditions used for preparing the solid solution formed in step i) to increase the difference, P.sub.max−P.sub.r, in maximum polarization, P.sub.max, and remanent polarisation, P.sub.r, of the solid solution.

A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, the ratio is more than or equal to 10% and less than or equal to 80%, and an average grain size of the second binder grains is more than or equal to 0.2 μm and less than or equal to 1 μm.

A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the number of atoms of the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, this ratio is more than or equal to 10% and less than or equal to 80%, and in an X-ray diffraction spectrum of the cubic boron nitride sintered material, one or both of conditions 1 and 2 are satisfied.

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.

One embodiment of the present invention discloses an electrostatic chuck made of an aluminum nitride sintered body, wherein the aluminum nitride sintered body comprises aluminum nitride and a composite oxide formed along the grain boundaries of the aluminum nitride, wherein the composite oxide comprises at least two kinds of rare earth metals which have a solid-solution relationship with each other, and wherein the composite oxide comprises a collection area having a higher oxygen content than a surrounding area.

A method of forming tungsten tetraboride, by combining tungsten and boron in a molar ratio of from about 1:6 to about 1:12, respectively, and firing the combined tungsten and boron in the hexagonal boron nitride crucible at a temperature of from about 1600 C to about 2000 C, to form tungsten tetraboride.

A cBN sintered compact comprising a cubic boron nitride and a ceramic binder phase, wherein a cubic C-containing Ta compound in an amount of 1.0 to 15.0 vol % is dispersed in the ceramic binder phase and has a mean particle diameter of 50 to 500 nm.

A ferrite sintered magnet has a ferrite phase having a magnetoplumbite-type crystal structure, and contains at least a metal element A, a metal element R, Fe, Co, Zn, and B. The element A is at least one kind of element selected from the group consisting of Sr, Ba, Ca, and Pb, and essentially includes Ca. The element R is at least one kind of element selected from the group consisting of Bi and rare-earth elements including Y, and essentially includes La. Atomic ratios of the metal elements satisfy the following expressions.

A.sub.1-rR.sub.rFe.sub.xCo.sub.yZn.sub.z  (1)

0.40≤r≤0.70  (2)

8.20≤x≤9.34  (3)

0.05<y≤0.50  (4)

0<z≤0.20  (5)

The content of Si is 0 to 0.60% by mass in terms of SiO.sub.2, and the content of B is 0.01 to 0.70% by mass in terms of B.sub.2O.sub.3.

There is provided a piezoelectric stack, including: a substrate; an oxide film on the substrate, containing zinc and oxygen as main elements; an electrode film on the oxide film; and a piezoelectric film on the electrode film, being an alkali niobium oxide film containing potassium, sodium, niobium, and oxygen and having a perovskite structure.