The present disclosure discloses a rare earth tantalate ceramic resisting corrosion of a low melting point oxide. A general chemical formula of the ceramic is RETaO.sub.4. A method for preparing the ceramic includes: weighing RE.sub.2O.sub.3 powder and Ta.sub.2O.sub.5 powder and adding to a solvent to mix, and ball milling the mixed solution with a ball mill to obtain powder A; drying the powder A, and sieving the powder A for a first time to obtain powder B; placing the powder B in a mold for compaction, pre-sintering the powder B to form a block C, cooling the block C to room temperature, grounding the block C with a grinder, and sieving the block C for a second time to obtain powder D; and sintering the powder D to obtain the rare earth tantalate ceramic. The ceramic has high density and strong corrosion resistance to low melting point oxides.

Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained.

Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following:

45 atm %≤Si/(Ru+Si)≤70 atm %

30 atm %≤Ru/(Ru+Si)≤55 atm %.

A method of forming a high purity ingot for wafer production, such as a silicon carbidewafer. Precursors are added to a reactor; at least part of a fiber is formed in the reactor from the precursors using chemical deposition interacting with the precursors; and granular material is then formed from the fiber. The method further includes forming the ingot from the granular material. In one aspect, the chemical deposition can include laser induced chemical vapor deposition. Further, the method can include separating one or more wafers from the ingot for use in semiconductor fabrication.

Certain examples of the present disclosure relate to a method for manufacturing a ceramic object, the method comprising: forming a ceramic structure by 3D printing the ceramic structure with a binder jetting 3D ceramic printer using a ceramic powder and an inorganic binder, wherein the ceramic powder comprises sintered ceramic material; and firing the ceramic structure to form the ceramic object.

A temperature-stable modified NiO—Ta.sub.2O.sub.5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni.sup.2+ ions are replaced by Cu.sup.2+ ions, and (Ni.sub.1/3Ta.sub.2/3).sup.4+ composite ions are replaced by [(Al.sub.1/2Nb.sub.1/2).sub.ySn.sub.1-y].sup.4+ composite ions, which considers that cations with similar ionic radii to Ni.sup.2+ and Ta.sup.5+ ions can be introduced into the NiTa.sub.2O.sub.6 ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa.sub.2O.sub.6 solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties are excellent.

LTCC devices are produced from dielectric compositions include a mixture of precursor materials that, upon firing, forms a dielectric material having a magnesium-silicon oxide host. An associated Ag system for LTCC conductors is also described.

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

A method of producing polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y (Y-358) whereby powders of yttrium (III) oxide, a barium (II) salt, and copper (II) oxide are pelletized, calcined at 850 to 950° C. for 8 to 16 hours, ball milled under controlled conditions, pelletized again and sintered in an oxygen atmosphere at 900 to 1000° C. for up to 72 hours. The polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y thus produced is in the form of elongated crystals having an average length of 2 to 10 μm and an average width of 1 to 2 μm, and embedded with spherical nanoparticles of yttrium deficient Y.sub.3Ba.sub.5Cu.sub.8O.sub.y having an average diameter of 5 to 20 nm. The spherical nanoparticles are present as agglomerates having flower-like morphology with an average particles size of 30 to 60 nm. The ball milled polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y prepared under controlled conditions shows significant enhancement of superconducting and flux pinning properties.

A cubic boron nitride sintered material comprises 30% by volume or more and 99.9% by volume or less of cubic boron nitride grains and 0.1% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grain having a carbon content of 0.08% by mass or less, the cubic boron nitride sintered material being free of free carbon.

Provided are a method for producing a ceramic sintered body having improved light emission intensity, a ceramic sintered body, and a light emitting device. The method for producing a ceramic sintered body comprises preparing a molded body that contains a nitride fluorescent material having a composition containing: at least one alkaline earth metal element M.sup.1 selected from the group consisting of Ba, Sr, Ca, and Mg; at least one metal element M.sup.2 selected from the group consisting of Eu, Ce, Tb, and Mn; Si; and N, wherein a total molar ratio of the alkaline earth metal element M.sup.1 and the metal element M.sup.2 in 1 mol of the composition is 2, a molar ratio of the metal element M.sup.2 is a product of 2 and a parameter y and wherein y is in a range of 0.001 or more and less than 0.5, a molar ratio of Si is 5, and a molar ratio of N is 8, and wherein the nitride fluorescent material has a crystallite size, as calculated by X-ray diffraction measurement using the Halder-Wagner method, of 550 Å or less, and calcining the molded body at a temperature in a range of 1,600° C. or more and 2,200° C. or less to obtain a sintered body.