The sintered body has an average particle size in the range of 0.1 μm or more and 5 μm or less, includes gamet-type oxide base material particles having at least Li, La, and Zr, has 8% by volume or more of voids, and has an ionic conductivity of 1.0×10.sup.−5 S/cm or more at temperature of 25° C.

The present disclosure relates to the technical field of ceramic powder preparation, and discloses a zirconia/titania/cerium oxide doped rare earth tantalum/niobate RETa/NbO.sub.4 ceramic powder and a preparation method thereof. A general chemical formula of the ceramic powder is RE.sub.1-x(Ta/Nb).sub.1-x(Zr/Ce/Ti).sub.2xO.sub.4, 0<x<1, the crystal structure of the ceramic powder is orthorhombic, the lattice space group of the ceramic powder is C222.sub.1, the particle size of the ceramic powder ranges from 10 to 70 μm, and particles of the ceramic powder are spherical. During preparation, the raw materials are ball-milled before a high temperature solid phase reaction, then mixed with a solvent and an organic binder to obtain a slurry C, then centrifuged and atomized to obtain dry pellets, and finally sintered to obtain a zirconia/titanium oxide/cerium oxide doped rare earth tantalum/niobate RETa/NbO.sub.4 ceramic powder, which satisfies the requirements of APS technology for ceramic powders.

An iron oxide powder includes a porous structure having the diameter of from 0.3 μm to 2 μm, wherein the iron oxide powder has an aluminum content of from 10 mol % to 80 mol %.

A method of treating at least one silicon carbide fibre, the method including a) formation of a silica layer at the surface of a silicon carbide fibre having an oxygen content less than or equal to 1% in atomic percentage, the silica layer being formed by contacting this fibre with an oxidizing medium having a temperature greater than or equal to 50° C. and pressure greater than or equal to 1 MPa, and b) removal of the silica layer formed by hydrothermal treatment of the fibre obtained after implementation of step a) in which the fibre is treated with water at a pressure between saturating vapour pressure and 30 MPa and at a temperature less than or equal to 400° C.

The invention relates to a strontium aluminate mixed oxide precursor and a method for producing same, as well as to a strontium aluminate mixed oxide and method for producing same. The strontium aluminate mixed oxide precursor can be transformed into a strontium aluminate mixed oxide at relatively low temperature. The strontium aluminate mixed oxide is characterized by substantially spherically-shaped particles with a spongy- or porous bone-like microstructure. A luminescent material including a strontium aluminate mixed oxide is also provided.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A preparation method for an yttrium aluminum garnet continuous fiber. The method prepares a spinnable precursor sol by utilizing an Al.sub.13 colloidal particles contained alumina sol, γ-AlOOH nano-dispersion, yttria sol, glacial acetic acid and polyvinylpyrrolidone, then prepares a gel continuous fiber by adopting a dry spinning technique, and carries out a heat treatment to obtain the yttrium aluminum garnet continuous fiber.

The present application discloses a dense lead metaniobate piezoelectric ceramic and a preparation method therefor. The chemical composition of the lead metaniobate piezoelectric ceramic is Pb.sub.1-xNb.sub.2O.sub.6, wherein x represents the Pb vacancy concentration of A sites in a tungsten bronze crystal structure, and x is greater than 0.00 and smaller than or equal to 0.20.

It is demanded that a LTCC substrate composition capable of maintaining low relative permittivity k and high Q value without having a reactivity with a silver which is an electrode material and causing migration of the silver during a co-firing operation at a low temperature. Provided with a low temperature co-fired substrate composition containing 83 to 91 wt. % of CaO-B.sub.2O.sub.3-SiO.sub.2 based glass powder, 7.5 to 14 wt. % of two or more kinds of nanometer-sized SiO.sub.2 powders having different ranges of particle diameter and 1.5 to 3 wt. % of β-wollastonite powder as a crystallization agent wherein the glass powder contains 40.0 to 45.0 wt. % of CaO, 9.0 to 20.0 wt. % of B.sub.2O.sub.3 and 40.0 to 46.0 wt. % of SiO.sub.2.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.