Patent classifications
C04B35/62675
Method for making yttrium-barium-copper-oxide having high offset superconducting transition temperature
A method of producing polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y (Y-358) whereby powders of yttrium (III) oxide, a barium (II) salt, and copper (II) oxide are pelletized, calcined at 850 to 950° C. for 8 to 16 hours, ball milled under controlled conditions, pelletized again and sintered in an oxygen atmosphere at 900 to 1000° C. for up to 72 hours. The polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y thus produced is in the form of elongated crystals having an average length of 2 to 10 μm and an average width of 1 to 2 μm, and embedded with spherical nanoparticles of yttrium deficient Y.sub.3Ba.sub.5Cu.sub.8O.sub.y having an average diameter of 5 to 20 nm. The spherical nanoparticles are present as agglomerates having flower-like morphology with an average particles size of 30 to 60 nm. The ball milled polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y prepared under controlled conditions shows significant enhancement of superconducting and flux pinning properties.
Ferrite sintered magnet
The present invention provides a ferrite sintered magnet comprising ferrite crystal grains having a hexagonal structure, wherein the ferrite sintered magnet comprises metallic elements at an atomic ratio represented by formula (1). In formula (1), R is at least one element selected from the group consisting of Bi and rare-earth elements, and R comprises at least La. In formula (1), w, x, z and m satisfy formulae (2) to (5). The above-mentioned ferrite sintered magnet further has a coefficient of variation of a size of the crystal grains in a section parallel to a c axis of less than 45%.
Ca.sub.1-w-xR.sub.wSr.sub.xFe.sub.zCo.sub.m (1)
0.360≤w≤0.420 (2)
0.110≤x≤0.173 (3)
8.51≤z≤9.71 (4)
0.208≤m≤0.269 (5)
Method for preparing gel composite material with piezoelectric property, and gel composite material and use thereof
Provided are a method for preparing a gel composite material with a piezoelectric property, and the gel composite material and use thereof, which belongs to the field of intelligent road traffic. In the method, titanium-containing blast furnace slag and metal oxides (PbO and ZrO.sub.2) are sufficiently and uniformly mixed, an obtained mixture is calcined under a certain thermal system, on the theoretical basis of mineral-phase reconstruction-synergistic regulation of all valuable components, and the mixture is cooled to a room temperature with a furnace to obtain the gel composite material with a piezoelectric property.
DIELECTRIC FOR A CAPACITOR AND A METHOD OF MANUFACTURING SAME
A method of manufacturing a dielectric for a capacitor and a dielectric for a capacitor manufactured thereby are provided. A dielectric for a capacitor is prepared by calcining a precursor mixture containing lead, lanthanum, zirconium, and titanium to produce calcined powder, adding additives including sodium, potassium, and the like to the powder, and sintering the mixture at a low temperature, whereby the dielectric has a high density and a large dielectric constant.
Dielectric material and multilayer ceramic capacitor including the same
A dielectric material which satisfies X9M characteristics and ensures operations over an extended period of time at 200° C. is provided.
AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.
LI-METAL OXIDE/GARNET COMPOSITE THIN MEMBRANE AND METHOD OF MAKING
A sintered composite ceramic includes a lithium-garnet major phase; and a lithium dendrite growth inhibitor minor phase, such that the lithium dendrite growth inhibitor minor phase comprises lithium tungstate. A method includes sintering a metal oxide component and a garnet component at a temperature in a range of 750° C. to 1500° C. to form a sintered composite ceramic.
Li3Mg2SbO6-based microwave dielectric ceramic material easy to sinter and with high q value, and preparation method therefor
A Li.sub.3Mg.sub.2SbO.sub.6-based microwave dielectric ceramic material easy to sinter and with high Q value, and a preparation method thereof are disclosed. A chemical formula of the material is Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6, wherein 0.02≤x≤0.08. The preparation method includes: 1) mixing and ball-milling Sb.sub.2O.sub.3 and Li.sub.2CO.sub.3 according to a chemical ratio and then drying, and conducting pre-sintering to obtain a Li.sub.3SbO.sub.4 phase; and 2) mixing and ball-milling MgO, ZnO and Li.sub.3SbO.sub.4 powder according a chemical ratio of Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6 and then drying, conducting granulation and sieving after adding an adhesive, pressing into a cylindrical body, and sintering the cylindrical body into ceramic in the air at 1325° C. and under normal pressure, wherein a dielectric constant is 7.2-8.5, a quality factor is 51844-97719 GHz, and a temperature coefficient of resonance frequency is −14-1 ppm/° C.
SINTERED BODY
A sintered body that includes zirconia containing a stabilizing element; and a plastic deformation region, wherein the stabilizing element includes at least one rare-earth element other than yttrium, and the stabilizing element content is 1.5% or more by mole and less than 3.0% by mole.
METHOD FOR SEPARATING IMPURITIES FROM SILICON CARBIDE, AND TEMPERATURE-TREATED AND PURIFIED SILICON CARBIDE POWDER
The invention concerns the area of ceramics an relates to a method for separating impurities from silicon carbide, said method being applicable to SiC powders from grinding sludges, and to temperature-treated and purified silicon carbide powder. The aim of the invention is to provide a method with which different impurities are substantially completely removed using a simple and economical process. This is achieved by a method in which pulverulent SiC waste products that have a mass percent of SiC of at least 50% and an average grain size d.sub.50 ranging from 0.5 to 1000 μm and have been subjected to a temperature treatment and cooled are mechanically treated and physically separated. The physically separated SiC powder is then divided into two fractions, one of which has a mass of impurities that is greater than the mass of impurities in the other fraction at least by a factor of 2.