A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, the plurality of internal electrode layers being alternately exposed to a first end face and a second end face of the multilayer structure. A bent portion, in which the plurality of dielectric layers in a substantially same position along a stacking direction project along the stacking direction, is formed in the multilayer chip. In the bent portion, a through-hole is formed in two or more of the plurality of internal electrode layers. The through-hole is a defect portion in a first direction in which the first end face faces with the second end face and in a second direction that is vertical to the first direction in a plane of the plurality of internal electrode layers.

The present invention relates to inorganic fibres having a composition comprising: 61.0 to 70.8 wt % SiO.sub.2; 28.0 to 39.0 wt % CaO; 0.10 to 0.85 wt % MgO other components, if any, providing the balance up to 100 wt %,

The sum of SiO.sub.2 and CaO is greater than or equal to 98.8 wt % and the other components comprise less than 0.70 wt % Al.sub.2O.sub.3, if any.

A ceramic matrix composite has fibers, a ceramic matrix bonded to the fibers, and ceramic particles, distributed throughout the matrix. A method includes mixing a high char ceramic resin precursor with ceramic particles, adding a catalyst to create a mixture, heating the mixture to produce functionalized ceramic particles, and cooling the mixture to produce a resin having functionalized particles.

A lithium battery includes: a positive electrode having a positive active material; a negative electrode including lithium metal; and a solid electrolyte disposed therebetween. The solid electrolyte contains at least one oxide represented by Li.sub.4±xM.sub.1-x′M′.sub.x′O.sub.4 (Formula 1), Li.sub.4-yM″O.sub.4-yA′.sub.y (Formula 2), or Li.sub.4+4zM′″.sub.1-zO.sub.4 (Formula 3), wherein and 0≤x23 1 and 0≤x′≤1, M is a Group 4 element, and M′ is an element of Group 2, 3, 5, 12, or 13, a vacancy, or a combination thereof, with the proviso that when M is Zr, then x≠0, x′≠0 and M′ is Be, Ca, Sr, Ba, Ra, Cd, Hg, Cn, Ga, In, TI, an element of Group 3 or 5, or a combination thereof; 0≤y≤1, M″ is a Group 4 element, and A′ includes at least one halogen, with the proviso that when M″ is Zr, then y≠0; and 0<z<1, and M′″ is a Group 4 element.

Provided is a boron nitride sintered body including: a plurality of coarse particles each having a length of 20 μm or more; and fine particles smaller than the plurality of coarse particles, in which, when viewed in a cross-section, the plurality of coarse particles intersect with each other. Provided is a method for manufacturing a boron nitride sintered body, the method including: a raw material preparation step of firing a mixture containing boron carbonitride and a boron compound in a nitrogen atmosphere to obtain lump boron nitride having an average particle diameter of 10 to 200 μm; and a sintering step of molding and heating a blend containing the lump boron nitride and a sintering aid to obtain a boron nitride sintered body including coarse particles each having a length of 20 μm or more in a cross-section and fine particles smaller than the coarse particles.

The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiO-Ta.sub.2O.sub.5-based microwave dielectric ceramic material sintered at low temperature and its preparation method. It is guided by ion doping modification, not only considering the substitution of ions with similar radius, such as Zn.sup.2+ replacing Ni.sup.2+ ions, V.sup.5+ replacing Ta.sup.5+ ions; Meanwhile, the selected doped oxide still has the property of low melting point. Therefore, the microwave dielectric properties of NiO-Ta.sub.2O.sub.5-based ceramic material can be improved and the appropriate sintering temperature can be reduced. In the invention, by adjusting the molar content of each raw material, the NiO-Ta.sub.2O.sub.5-based ceramic material with low-temperature sintering, stable temperature and excellent microwave dielectric property is directly synthesized at one time, which can be widely applied to the technical field of LTCC.

A temperature-stable modified NiO—Ta.sub.2O.sub.5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni.sup.2+ ions are replaced by Cu.sup.2+ ions, and (Ni.sub.1/3Ta.sub.2/3).sup.4+ composite ions are replaced by [(Al.sub.1/2Nb.sub.1/2).sub.ySn.sub.1-y].sup.4+ composite ions, which considers that cations with similar ionic radii to Ni.sup.2+ and Ta.sup.5+ ions can be introduced into the NiTa.sub.2O.sub.6 ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa.sub.2O.sub.6 solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties are excellent.

Polycrystalline cubic boron nitride compact include a body having sintered microcrystalline cubic boron nitride in a matrix of binder material. The microcrystalline cubic boron nitride particles have a size ranging from 2 microns to 50 microns. The particles of microcrystalline cubic boron nitride include a plurality of sub-grains, each sub-grain having a size ranging from 0.1 micron to 2 microns. The compacts are manufactured in a high pressure—high temperature (HPHT) sintering process. The compacts exhibit intergranular defect formation following introduction of wear. The sub-grains promote crack propagation based on micro-chipping rather than on a cleavage mechanism and, in sintered bodies, cracks propagate intergranularly rather than intragranularly, resulting in increased toughness and improved wear characteristics as compared to monocrystalline cubic boron nitride. The compacts are suitable for use as abrasive tools.

A dielectric composition is provided. The dielectric composition includes: a main component made of: a first complex oxide expressed by a chemical formula {K(Ba.sub.1-xSr.sub.x).sub.2Nb.sub.5O.sub.15}; and a second complex oxide expressed by a chemical formula that differs the chemical formula of the first complex oxide. The second complex oxide is a complex oxide expressed by one of chemical formulae: {(Ca.sub.1-ySr.sub.y)(Zr.sub.1-zTi.sub.z)O.sub.3}; {Ba(Ti.sub.1-uZr.sub.u)O.sub.3}; {(Ca.sub.1-vSr.sub.v)TiSiO.sub.5}; and {(Ba.sub.1-wRe.sub.2w/3)Nb.sub.2O.sub.6}, x satisfies 0.35≦x≦0.75, and a satisfies 0.25≦a≦0.75 when a molar ratio between the first and second complex oxides is defined by a:b in an order and a+b=1.00.

Disclosed are methods for forming boron nitride-containing aggregates that exhibit improved wear by attrition, and resulting filled polymers that exhibit significantly improved thermal conductivity. The boron nitride-containing aggregates are prepared according to a method that includes wet granulating boron nitride powder with a granulation solution to form wet boron nitride-containing granules; and drying the wet boron nitride-containing granules to cause evaporation of solvent in the granulation solution, thereby forming boron nitride-containing granules. Sintering achieves the desired boron nitride-containing aggregates.