The present invention provides a fused product comprising LTM perovskite, L designating lanthanum, T being an element selected from strontium, calcium, magnesium, barium, yttrium, ytterbium, cerium, and mixtures of these elements, and M designating manganese.

A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC.sub.2O.sub.5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.198≦x≦0.375, 0.389≦y≦0.625, and x/3≦z≦x/3+1/9.

A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC.sub.2O.sub.5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.000<x≦0.281, 0.625≦y<1.000, and 0.000<z≦0.375.

The aim of the present invention lies in providing a dielectric composition which has a relatively high dielectric constant of 800 or greater, and which has relatively low dielectric loss of 4% or less when a DC bias of at least 8 V/ym is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component. A dielectric composition having a main component represented by (Bi.sub.aNa.sub.bSr.sub.cBa.sub.d) (α.sub.xTi.sub.1-x) O.sub.3, characterized in that a is at least one selected from Zr and Sn; and a, b, c, d and x satisfy the following: 0.140≦a≦0.390, 0.140≦b≦0.390, 0.200≦c≦0.700, 0.020≦d≦0.240, 0.020≦x≦0.240 and 0.950<a+b+c+d≦1.050.

Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.

A porous material includes an aggregate in which oxide films are formed on surfaces of particle bodies, and a binding material that contains cordierite and binds the aggregate together in a state where pores are formed. The binding material or the oxide films contain a rare-earth component that excludes Ce.

A polycrystalline fused product based on brownmillerite, includes, for more than 95% of its weight, of the elements Ca, Sr, Fe, O, M and M′, the contents of the elements being defined by the formula X.sub.yM.sub.zFe.sub.tM′.sub.uO.sub.2.5, wherein the atomic indices are such that 0.76≤y≤1.10, z≤0.21, 0.48≤t≤1.15 and u≤0.52, 0.95≤y+z≤1.10, and 0.95≤t+u≤1.10, X being Ca or Sr or a mixture of Ca and Sr, M being an element chosen from the group formed by La, Ba and mixtures thereof, M′ being an element chosen from the group formed by Ti, Cu, Gd, Mn, Al, Sc, Ga, Mg, Ni, Zn, Pr, In, Co, and mixtures thereof, the sum of the atomic indices of Ti and Cu being less than or equal to 0.1.

The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d.sub.33 and different Curie temperatures T.sub.C in the process.

[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.

[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm.sup.2/Vs or more.

The present disclosure relates to an orthophosphate thermal barrier coating material with high coefficient of thermal expansion and a preparation method thereof. ReM.sub.3P.sub.3O.sub.12 series ceramics with an eulytite crystal structure are prepared by a high-temperature solid-phase reaction for the first time. The ReM.sub.3P.sub.3O.sub.12 ceramic belongs to a −43 m space group of a cubic crystal system, which not only has a higher melting point and excellent high-temperature phase stability, but also has a lower thermal conductivity and a suitable coefficient of thermal expansion. It can effectively alleviate the stress caused by the mismatch of the coefficient of thermal expansion of the base material and the ceramic layer, so as to meet the requirements of thermal insulation and high-temperature oxidation and corrosion resistance of the hot end parts in long-term service, which has application prospects in the field of thermal barrier coatings.