C04B2235/3213

Manufacturing method for piezoelectric ceramics

Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Q.sub.m), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of Ba.sub.4Ti.sub.12O.sub.27 and Ba.sub.6Ti.sub.17O.sub.40, and a piezoelectric element using the same.

IONIC CONDUCTORS
20230183090 · 2023-06-15 ·

A solid ionic conducting material for use in an electrochemical device comprises an oxyhydroxide or hydrated oxide derived from of an oxide with a perovskite, Brownmillerite, layered oxide, and/or K.sub.4CdCl.sub.6 structure, the elemental composition of the initial oxide being selected to provide suitable conduction properties for the derived anhydrous or hydrated oxyhydroxide or hydrated oxide. A method of making such a solid ionic conducting material, including treatment with water, and an electrochemical device incorporating such a solid ionic conducting material (optionally as an electrolyte) are also disclosed.

Method for fabrication of crack-free ceramic dielectric films

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

Resonant Multilayer Ceramic Capacitors

Provided is an improved multilayered ceramic capacitor and an electronic device comprising the multilayered ceramic capacitor. The multilayer ceramic capacitor comprises first conductive plates electrically connected to first external terminations and second conductive plates electrically connected to second external terminations. The first conductive plates and second conductive plates form a capacitive couple. A ceramic portion is between the first conductive plates and said second conductive plates wherein the ceramic portion comprises paraelectric ceramic dielectric. The multilayer ceramic capacitor has a rated DC voltage and a rated AC V.sub.PP wherein the rated AC V.sub.PP is higher than the rated DC voltage.

Process for the manufacture of a solid oxide membrane electrode assembly

A process for the preparation of a membrane electrode assembly comprising providing, in the following layer order, (I) a green supporting electrode layer comprising a composite of a mixed metal oxide and Ni oxide; (IV) a green mixed metal oxide membrane layer; and (V) a green second electrode layer comprising a composite of a mixed metal oxide and Ni oxide; and sintering all three layers simultaneously.

ELECTRODE COMPRISING HEAVILY-DOPED CERIA

An electrode can include a functional layer having an Ln.sub.2MO.sub.4 phase, where Ln is at least one lanthanide optionally doped with a metal and M is at least one 3d transition metal, and a heavily-doped ceria phase. An electrochemical device or a sensor device can include the electrode.

Materials for ammonia synthesis

Disclosed herein are doped perovskite oxides. The doped perovskite oxides may be used as a cathode material in an electrochemical cell to electrochemically generate ammonia from N.sub.2. The doped perovskite oxides may be combined with nitride compounds, for instance iron nitride, to further increase the efficiency of the ammonia production.

Lead-free piezoelectric ceramic composition, method for producing same, piezoelectric element using lead-free piezoelectric ceramic composition, ultrasonic processing machine, ultrasonic drive device, and sensing device

A lead-free piezoelectric ceramic composition mainly includes a first crystal phase (KNN phase) and a second crystal phase (NTK phase). In the first crystal phase (KNN phase), a plurality of crystal grains formed of an alkali niobate/tantalate perovskite oxide having piezoelectric characteristics is bound to each other in a deposited state. The second crystal phase (NTK phase) is formed of a compound containing titanium (Ti) and fills spaces between the crystal grains in the first crystal phase.

LITHIUM-ION CONDUCTIVE CERAMIC MATERIAL AND PROCESS
20230178795 · 2023-06-08 ·

A method of preparing a lithium lanthanum zirconate (LLZO) cubic garnet material is provided which comprises the following steps: (a) milling a slurry comprising one or more precursor compounds in an aqueous medium, wherein the one or more precursor compounds comprise lithium, lanthanum, zirconium and optionally one or more dopant elements, to provide a milled slurry; (b) spray drying the milled slurry to provide a spray-dried powder; and (c) annealing the spray-dried powder. The resultant LLZO cubic garnet material may be used as a lithium ion conductive solid electrolyte in secondary lithium-ion batteries.

GARNET-TYPE LITHIUM-ION SOLID-STATE CONDUCTOR
20220367908 · 2022-11-17 ·

Disclosed is a solid state electrolyte comprising a compound of Formula 1


Li.sub.7-.sub.a.sub.*α-(b−4)*β−xM.sup.a.sub.αLa.sub.3Hf.sub.2−βM.sup.b.sub.βO.sub.12−x−δX.sub.x   (1)

wherein

M.sup.a is a cationic element having a valence of a+;

M.sup.b is a cationic element having a valence of b+; and

X is an anion having a valence of −1,

wherein, when M.sup.a includes H, 0≤α≤5, otherwise 0≤α≤0.75, and wherein 0≤β≤1.5, 0≤x≤1.5, and (a*α+(b−4)β+x)>0, 0≤δ≤1.