A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu—Kα X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°.

Provided is a zirconia sintered body that suppresses discoloration due to porcelain. The zirconia sintered body comprises at least one of a coloring agent A: erbium oxide and a coloring agent B: nickel oxide, and a composite oxide of zirconium and vanadium.

An abrasive article, comprising a polycrystalline material comprising abrasive grains and a filler material having an average negative coefficient of thermal expansion (CTE) within a range of temperatures between about 70 K to about 1500 K. A method of forming an abrasive article, comprising preparing an abrasive material, preparing a filler material having an average negative coefficient of thermal expansion (CTE) within a range of temperatures between about 150 K to about 1500 K, and forming a polycrystalline material comprising grains of the abrasive material and the filler material.

A manufacturing method of ceramic powder includes mixing a barium carbonate having a specific surface are of 15 m.sup.2/g or more, a titanium dioxide having a specific surface area of 20 m.sup.2/g or more, a first compound of a donor element having a larger valence than Ti, and a second compound of an acceptor element having a smaller valence than Ti and having a larger ion radium than Ti and the donor element, and synthesizing barium titanate powder by calcining the barium carbonate, the titanium dioxide, the first compound and the second compound until a specific surface area of the barium titanate powder becomes 4 m.sup.2/g or more and 25 m.sup.2/g or less.

A sintered body of the present invention is a sintered body including a first material and cubic boron nitride. The first material is partially-stabilized ZrO.sub.2 including 5 to 90 volume % of Al.sub.2O.sub.3 dispersed in crystal grain boundaries or crystal grains of partially-stabilized ZrO.sub.2.

A multilayer coil component including a magnetic part formed of a ferrite material, a non-magnetic part formed of a non-magnetic ferrite material, and a coiled conductive part embedded in the magnetic part and the non-magnetic part. The non-magnetic part has an Fe content of 36.0 to 48.5 mol % in terms of Fe.sub.2O.sub.3, a Zn content of 46.0 to 57.5 mol % in terms of ZnO, a V content of 0.5 to 5.0 mol % in terms of V.sub.2O.sub.5, a Mn content of 0 to 7.5 mol % in terms of Mn.sub.2O.sub.3, and a Cu content of 0 to 5.0 mol % in terms of CuO with respect to the sum of the Fe content in terms of Fe.sub.2O.sub.3, the Zn content in terms of ZnO, the V content in terms of V.sub.2O.sub.5, and if present, the Cu content in terms of CuO, and the Mn content in terms of Mn.sub.2O.sub.3.

A semiconductor ceramic composition represented by formula (1),

(Ba.sub.vBi.sub.xA.sub.yRE.sub.w).sub.m(Ti.sub.uTM.sub.z)O.sub.3  (1),

wherein, A represents at least one element selected from Na and K, RE represents at least one element selected from Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er;

0.750y≦x≦1.50y  (2),

0.007≦y≦0.125  (3),

0≦(w+z)≦0.010  (4),

v+x+y+w=1  (5),

u+z=1  (6),

0.950≦m≦1.050  (7),

0.001 to 0.055 mol of Ca is contained, and 0.0005 to 0.005 mol of at least one selected from Mg, Al, Fe, Co, Cu and Zn is contained.

A semiconductor ceramic composition which is a BaTiO.sub.3 based semiconductor ceramic composition, wherein, part of Ba is replaced by at least A (at least one alkali metal element selected from Na and K), Bi and RE (at least one element selected from rare earth elements including Y), and part of Ti is replaced by at least TM (at least one element selected from the group including of V, Nb and Ta), the relationships of 0.7≦{(the content of Bi)/(the content of A)}≦1.43, 0.017≦{(the content of Bi)+(the content of A)}≦0.25, and 0<{(the content of RE)+(the content of TM)}≦0.01 are satisfied when the total content of Ti and TM is set as 1 mol, the grain sizes have a maximum peak in a grain size distribution in a range of 1.1 μm to 4.0 μm or less, and the distribution frequency of the peak is 20% or more.

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn.sup.4+/(Sn.sup.2++Sn.sup.4+) which is a ratio of Sn.sup.4+ to a total amount of Sn in the composite oxide is 0.124≤Sn.sup.4+/(Sn.sup.2++Sn.sup.4+)≤0.148.

A method of forming a shaped abrasive particle including extruding a mixture into a form, applying a dopant material to an exterior surface of the form, and forming a precursor shaped abrasive particle from the form.