Provided is a cubic boron nitride sintered body including more than or equal to 85 volume percent and less than 100 volume percent of cubic boron nitride particles, and a remainder of a binder, wherein the binder contains WC, Co, and an Al compound, the binder contains W.sub.2Co.sub.21B.sub.6, and, when I.sub.A represents an X-ray diffraction intensity of a (111) plane of the cubic boron nitride particles, I.sub.B represents an X-ray diffraction intensity of a (100) plane of the WC, and I.sub.C represents an X-ray diffraction intensity of a (420) plane of the W.sub.2Co.sub.21B.sub.6, a ratio I.sub.C/I.sub.A of the I.sub.C to the I.sub.A is more than 0 and less than 0.10, and a ratio I.sub.C/I.sub.B of the I.sub.C to the I.sub.B is more than 0 and less than 0.40.

A method may include depositing a sacrificial support material on or adjacent to a build surface. The sacrificial support material may be configured to support a continuous reinforcement material during an additive manufacturing technique. The method also may include extruding the continuous reinforcement material from an additive manufacturing device such that at least a portion of the continuous reinforcement material contacts and is supported by the sacrificial support material; and removing the sacrificial support material to result in a feature defined at least in part by the continuous reinforcement material at the absence of sacrificial support material.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

A sintered material includes a first phase and a second phase, wherein the first phase is composed of cubic boron nitride particles, and the following relational expressions are satisfied when more than or equal to two cubic boron nitride particles adjacent to and in direct contact with each other among the cubic boron nitride particles are defined as a contact body, Di represents a length of an entire perimeter of the contact body, n represents the number of contact locations at which the cubic boron nitride particles are in direct contact with each other, d.sub.k represents a length of each of the contact locations, and Σd.sub.k (where k=1 to n) represents a total length of the contact locations: Dii=Di+(2×Σd.sub.k (where k=1 to n)); and [(Dii−Di)/Dii]×100≤50.

A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, the ratio is more than or equal to 10% and less than or equal to 80%, and an average grain size of the second binder grains is more than or equal to 0.2 μm and less than or equal to 1 μm.

A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the number of atoms of the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, this ratio is more than or equal to 10% and less than or equal to 80%, and in an X-ray diffraction spectrum of the cubic boron nitride sintered material, one or both of conditions 1 and 2 are satisfied.

A composite member includes a matrix part including an inorganic substance, and an organic infrared absorbing material present in a dispersed state inside the matrix part. The composite member has a porosity of 20% or less in a section of the matrix part. A heat generation device includes the composite member, and an infrared light source for irradiating the composite member with infrared rays. A building member and a light emitting device each include the composite member, or the heat generation device.

One embodiment of the present invention discloses an electrostatic chuck made of an aluminum nitride sintered body, wherein the aluminum nitride sintered body comprises aluminum nitride and a composite oxide formed along the grain boundaries of the aluminum nitride, wherein the composite oxide comprises at least two kinds of rare earth metals which have a solid-solution relationship with each other, and wherein the composite oxide comprises a collection area having a higher oxygen content than a surrounding area.

A method to form a machinable ceramic matrix composite comprises forming a porous ceramic multilayer on a surface of a fiber preform. In one example, the porous ceramic multilayer comprises a gradient in porosity in a direction normal to the surface. In another example, the porous ceramic multilayer includes low-wettability particles having a high contact angle with molten silicon, where an amount of the low-wettability particles in the porous ceramic multilayer varies in a direction normal to the surface. After forming the porous ceramic multilayer, the fiber preform is infiltrated with a melt, and the melt is cooled to form a ceramic matrix composite with a surface coating thereon. An outer portion of the surface coating is more readily machinable than an inner portion of the surface coating. The outer portion of the surface coating is machined to form a ceramic matrix composite having a machined surface with a predetermined surface finish and/or dimensional tolerance.

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al.sub.2O.sub.3 substrate placed in the reaction chamber.