A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

The composite sintered body includes AlN and MgAl.sub.2O.sub.4. The open porosity of the composite sintered body is lower than 0.1%. The relative density of the composite sintered body is not lower than 99.5%. The total percentage of the AlN and the MgAl.sub.2O.sub.4 contained in the composite sintered body is not lower than 95 weight percentage and not higher than 100 weight percentage. The percentage of the MgAl.sub.2O.sub.4 contained in the composite sintered body is not lower than 15 weight percentage and not higher than 70 weight percentage. It is thereby possible to provide a high-density composite sintered body having high plasma corrosion resistance, high volume resistivity, and high thermal conductivity.

A cubic boron nitride sintered material includes: more than 80 volume % and less than 100 volume % of cubic boron nitride grains; and more than 0 volume % and less than 20 volume % of a binder phase. The binder phase includes: at least one selected from a group consisting of a simple substance, an alloy, and an intermetallic compound selected from a group consisting of a group 4 element, a group 5 element, a group 6 element in a periodic table, aluminum, silicon, cobalt, and nickel. A dislocation density of the cubic boron nitride grains is more than or equal to 3×10.sup.17/m.sup.2 and less than or equal to 1×10.sup.20/m.sup.2.

Methods of flash sintering have been developed in which particle are initially coated with thin layers by atomic layer deposition (ALD). Examples are provided in which 8 mol % yttria-stabilized zirconia (8YSZ) particles are coated with small quantities of Al.sub.2O.sub.3 by particle atomic layer deposition (ALD). Sintered materials that result from the process have been characterized. Sintered materials having unique characteristics are also described.

A cubic boron nitride sintered material comprises 30% by volume or more and 80% by volume or less of cubic boron nitride grains and 20% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grains having a dislocation density of 3×10.sup.17/m.sup.2 or more and 1×10.sup.20/m.sup.2 or less.

Embodiments disclosed herein include a puck for an electrostatic chuck. In an embodiment, the puck comprises a substrate with a top surface and a bottom surface. In an embodiment, a first material composition is at the top surface of the substrate, and a second material composition is at the bottom surface of the substrate. In an embodiment, a composition gradient is provided through the substrate between the top surface and the bottom surface.

A preceramic resin formulation comprising a polycarbosilane preceramic polymer, an organically modified silicon dioxide preceramic polymer, and, optionally, at least one filler. The preceramic resin formulation is formulated to exhibit a viscosity of from about 1,000 cP at about 25° C. to about 5,000 cP at a temperature of about 25° C. The at least one filler comprises first particles having an average mean diameter of less than about 1.0 μm and second particles having an average mean diameter of from about 1.5 μm to about 5 μm. Impregnated fibers comprising the preceramic resin formulation are also disclosed, as is a composite material comprising a reaction product of the polycarbosilane preceramic polymer, organically modified silicon dioxide preceramic polymer, and the at least one filler. Methods of forming a ceramic matrix composite are also disclosed.

A cBN sintered material comprising cBN particles and a binder phase, in which the binder phase contains AlN and AlB.sub.2, a content proportion of cBN particles is 70 to 97 vol %, cBN sintered material has a volume resistivity up to 5×10.sup.−3 Ωcm, a rate of a peak intensity derived from Al with respect to a peak intensity derived from cBN particles is less than 1.0%, cBN particles include fine particles and coarse particles, coarse particles optionally include ultra-coarse particles, with respect to the entire cBN particles, a content proportion α of fine particles is from 10 vol %, a content proportion β of coarse particles is from 30 vol %, a content proportion γ of ultra-coarse particles is 25 vol % or less, and a total of the content proportion α of fine particles and the content proportion β of coarse particles is 50 to 100 vol %.

A cubic boron nitride sintered material comprising cubic boron nitride grains, a binder phase, and a void, in which a percentage of the cubic boron nitride grains based on the total of the cubic boron nitride grains and the binder phase is 40 vol % to 70 vol %, a percentage of the binder phase based on the total of the cubic boron nitride grains and the binder phase is 30 vol % to 60 vol %, the binder phase includes 10 vol % to 100 vol % of aluminum oxide grains, an average grain size of the aluminum oxide grains is 50 to 250 nm, the cubic boron nitride sintered material comprises 0.001 vol % to 0.100 vol % of one or more first voids, and at least one portion of each of the first voids is in contact with the aluminum oxide grains.

A cubic boron nitride (cBN)-based composite including about 30-65 vol. % cBN, about 3-30 vol. % zirconium (Zr)-containing compounds, about 0-10 vol. % cobalt-tungsten-borides (Co.sub.xW.sub.yB.sub.z), about 2-30 vol. % aluminum oxide (Al.sub.2O.sub.3), about 0.5-10 vol. % tungsten borides, and less than or equal to about 5 vol. % aluminum nitride (AlN).