A negative resist composition is provided comprising a base polymer and an acid generator in the form of a sulfonium salt having at least two polymerizable double bonds in the molecule. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

A negative resist composition is provided comprising a base polymer and an acid generator in the form of a sulfonium salt having at least two polymerizable double bonds in the molecule. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

A photo-decomposable compound, a photoresist composition including the photo-decomposable compound, and a method of manufacturing an integrated circuit (IC) device using the photoresist composition, the photo-decomposable compound including a phenyl sulfonium cation component; and an anion component, wherein the phenyl sulfonium cation component has a protecting group, which is decomposable by an action of acid to generate an alkali-soluble group in response to exposure, the anion component generates acid in response to exposure, the protecting group is represented by *—C(═O)OR, in which R is a substituted or unsubstituted t-butyl group or a substituted or unsubstituted C3 to C30 alicyclic group, and * is a bonding site, and the protecting group is bonded to a phenyl group of the phenyl sulfonium cation component through an ether linking group.

A photo-decomposable compound, a photoresist composition including the photo-decomposable compound, and a method of manufacturing an integrated circuit (IC) device using the photoresist composition, the photo-decomposable compound including a phenyl sulfonium cation component; and an anion component, wherein the phenyl sulfonium cation component has a protecting group, which is decomposable by an action of acid to generate an alkali-soluble group in response to exposure, the anion component generates acid in response to exposure, the protecting group is represented by *—C(═O)OR, in which R is a substituted or unsubstituted t-butyl group or a substituted or unsubstituted C3 to C30 alicyclic group, and * is a bonding site, and the protecting group is bonded to a phenyl group of the phenyl sulfonium cation component through an ether linking group.

A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.

A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.

A salt represented by formula (I), a resin comprising a structural unit derived from the salt represented by formula (I), a resit composition comprising the salt represented by formula (I) or a resin comprising a structural unit derived from the salt represented by formula (I).

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A salt represented by formula (I), a resin comprising a structural unit derived from the salt represented by formula (I), a resit composition comprising the salt represented by formula (I) or a resin comprising a structural unit derived from the salt represented by formula (I).

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An actinic ray-sensitive or radiation-sensitive resin composition includes an acid-decomposable resin and a specific compound, in which the specific compound has two or more cationic moieties and the same number of anionic moieties as that of the cationic moieties, and at least one of the cationic moieties has a group represented by General Formula (I).

An actinic ray-sensitive or radiation-sensitive resin composition includes an acid-decomposable resin and a specific compound, in which the specific compound has two or more cationic moieties and the same number of anionic moieties as that of the cationic moieties, and at least one of the cationic moieties has a group represented by General Formula (I).