Methods of depositing silicon oxide on carbon-based films on a substrate involve adsorbing a silicon-containing reactant on the substrate surfaces, generating oxygen radicals from N2O, and exposing the adsorbed silicon-containing reactant to the oxygen radicals to form a silicon oxide film. In some embodiments, the carbon-based films form features having sidewalls. The methods result in low carbon loss and substantially vertical sidewalls. Embodiments of the methods are performed at high temperatures that facilitate high quality deposition.

Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

A method of fabricating air gaps in advanced semiconductor devices for low capacitance interconnects. The method includes exposing a substrate to a gas pulse sequence to deposit a material that forms an air gap between raised features.

Amino-functionalized cyclic oligosiloxanes, which have at least three silicon and three oxygen atoms as well as at least one organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

A process of preparing a conductive oxide interface is described herein, comprising contacting a surface of a first oxide with a plasma of a reducing gas to obtain a treated surface, and depositing a second oxide on the treated surface, thereby obtaining a conductive oxide interface between the first oxide and the second oxide. Further described herein are composites and articles of manufacture comprising same, the composites comprising a first oxide and second oxide, and an interface between the first oxide and second oxide which comprises a conductive oxide interface, wherein the conductive oxide interface comprises nitrogen atoms and/or the second oxide is in an amorphous form and the conductive oxide interface is characterized by a sheet resistance of no more than 10.sup.5 omega/square.

According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

Methods for fabricating a 3D NAND flash memory are disclosed. The method includes the steps of forming a hardmask pattern on the hardmask layer, and using the hardmask pattern to form apertures in the alternating layers by selectively plasma etching the alternating layers versus the hardmask layer using a hydrofluorocarbon etching gas selected from the group consisting of 1,1,1,3,3,3-hexafluoropropane (C.sub.3H.sub.2F.sub.6), 1,1,2,2,3,3-hexafluoropropane (iso-C.sub.3H.sub.2F.sub.6), 1,1,1,2,3,3,3-heptafluoropropane (C.sub.3HF.sub.7), and 1,1,1,2,2,3,3-heptafluoropropane (iso-C.sub.3HF.sub.7), wherein the first etching layer comprises a material different from that of the second etching layer.

Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of less than about 200° C. and is treated with helium plasma to reduce stress of the deposited layer to an absolute value of less than about 80 MPa. Plasma treatment reduces hydrogen content in the silicon oxide layer, and leads to low stress films that can also have high density and low roughness. In some embodiments, the film is deposited on a semiconductor substrate that contains one or more temperature-sensitive layers, such as layers of organic material or spin-on dielectric that cannot withstand temperatures of greater than 250° C. In some embodiments the silicon oxide film is deposited to a thickness of between about 100-200 Å, and is used as a hardmask layer during etching of other layers on a semiconductor substrate.

The present invention relates to a technology of solving an issue where screens are contaminated with pollution caused by fingerprints, cosmetics, etc. on covers or windows of mobile devices such as smartphones, tablets, etc. and other user contact devices, thereby maintaining the excellent surface hardness properties of existing covers or windows and preventing deterioration of surface properties (antifouling properties) even when used long-term. The method for forming a surface having super water-repellent and super oil-repellent properties comprises the steps of: etching a surface of a target on which a surface with super water-repellent and super oil-repellent properties will be formed, to thereby form a surface structure in which convex parts () and concave parts () are continuously formed; and performing a conformal coating for coating a fluorine-based material on the surface structure which is etched on the surface of the target, wherein all configuration walls of the convex parts and all configuration walls of the concave parts are coated at a uniform thickness.