Patent classifications
C23C18/1212
Method for forming water repellent, long-term durable and biomimetic coatings from methyltrimethoxysilane
Embodiments of the present disclosure relates generally to methods of providing biomimetic superhydrophobic coatings to substrates, and more specifically to providing biomimetic inorganic silica or silane-based coatings that enable tunable hierarchical surface structures with high coating-to-substrate adhesion, resistance to various mechanical abradents, durability, shelf stability, and enhanced non-wettability or water-repellency.
METHOD FOR FORMING INSULATING FILM, APPARATUS FOR PROCESSING SUBSTRATE, AND SYSTEM FOR PROCESSING SUBSTRATE
There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.
Method for producing a microfluidic device
The present invention relates to a method for producing a microfluidic device, in particular, a sol-gel method for producing a microfluidic device in hybrid silica glass. The invention also relates to a microfluidic device obtainable by the method as described above and to microfluidic device in hybrid silica glass comprising at least one microchannel having a depth of at least 1 μm, preferably between 1 μm and 1 mm, and more preferably between 10 and 100 μm.
GRADIENT GLASS-LIKE CERAMIC STRUCTURES AND BOTTOM-UP FABRICATION METHOD THEREOF
Thin glass-like ceramic films which possess organic or physically functional structures with thicknesses in the 15 to 500 nm range and bottom-up methods for their fabrication are described. SiO.sub.2-rich structures having gradient properties are formed from a silsesquioxane having an electronegative β substituent and at least one organofunctional silane or at least one metal alkoxide.
Inorganic coating and composition
This disclosure relates to basic inorganic compositions. Methods of providing antifungal/antibacterial resistance and/or hydrophobicity and/or corrosion resistance by coating surfaces with the basic inorganic compositions are provided. In another aspect, a silicate composition comprising at least one alkali earth metal; and a Group IV element of silicon, germanium, tin, or lead having at least one hydrocarbon moiety covalently bonded thereto is provided.
INORGANIC POLYMER CERAMIC-LIKE COATINGS AND METHODS FOR THEIR PREPARATION
An inorganic polymer coating. Low cost thermal barrier coatings thermal barrier coating and a process that starts with an aqueous suspension which may be sprayed, dipped, rolled or painted on a surface and cured. The cured thermal barrier coating has high thermal performance, low emissivity, high adhesion to multiple substrates, thermal cycle and thermal shock stability, high hardness, high elasticity and toughness.
SELECTIVE DEPOSITION OF SILICON OXIDE ON DIELECTRIC SURFACES RELATIVE TO METAL SURFACES
Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.
Method and device for marking at least one inner face of a container, and corresponding container
The present inventing relates to a method for marking at least one inner face of a container with at least one given pattern, in which method the inside of said inner face is at least partially coated with a pigmented sol-gel layer that reacts to laser radiation, by spraying or by means of a stamp applied to a precise zone of the layer provided for containing the pattern, and the pattern is developed by interaction between the sol-gel and UV laser radiation specifically programmed according to the pattern to be revealed, the UV laser radiation being emitted by a device comprising an optical system having a long optical length that allows a field depth of more than 1 mm to be obtained. The present invention also relates to a device suitable for implementing this method and to a container obtained by this method.
Spin-on inorganic oxide containing composition useful as hard masks and filling materials with improved thermal stability
The present invention relates to a composition comprising; components a. c. and d; and optional component b. wherein, component a. is a metal compound having the structure (I), optional component b., is a polyol additive, having structure (VI), component c. is a high performance polymer additive, and component d. is a solvent. The present invention further relates to using this compositions in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##
METHOD FOR FORMING INSULATING FILM, APPARATUS FOR PROCESSING SUBSTRATE, AND SYSTEM FOR PROCESSING SUBSTRATE
There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.