A substrate liquid processing apparatus includes a substrate holder 52 configured to attract, hold and rotate a substrate W; a heating device configured to heat the substrate holder 52 from an outside thereof; a plating liquid supply 53 configured to supply a plating liquid L1 onto the substrate W being rotated while being held by the substrate holder 52; and a controller 3 configured to control operations of the substrate holder 52, the heating device and the plating liquid supply 53. The controller 3 controls the heating device to heat the substrate holder 52 to equal to or higher than 50° C. before the substrate W is held by the substrate holder 52.

A multilayer wiring forming method includes filling a via, which is formed in an insulating film including an oxide film formed on a wiring of a substrate and is extended to the wiring, by forming an electroless plating film, which does not diffuse into the oxide film, from a bottom surface of the via while using the wiring, which is exposed at the bottom surface of the via, as a catalyst.

A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

An object is to provide a composite plating film excellent in the water-repellent property and oil-repellent property using a material that is less likely to accumulate in the environment, as substitute for a fluorine resin. A composite plating film is provided which includes an alloy matrix phase and a silicone dispersed in the alloy matrix phase. In the composite plating film, the silicone preferably has Hansen solubility parameters comprising a dispersion term .sub.D of 15 MPa.sup.1/2 or less, a polar term .sub.P of 3 MPa.sup.1/2 or less, and a hydrogen bonding term .sub.H of 3 MPa.sup.1/2 or less. The silicone preferably has an interaction radius of a Hansen solubility sphere of 5.0 MPa.sup.1/2 or less.

Disclosed are methods for coating or decorating a surface of a glass sleeve. The methods include depositing a metal layer onto a surface of the glass sleeve by an electroless plating method. Also disclosed are glass sleeves which are coated or decorated on an internal surface, and electronic devices comprising the coated glass sleeves.

A controller performs an adjustment processing including: forming a film on a surface of a substrate by a film forming unit; removing a peripheral portion of the film by the film forming unit; acquiring surface information indicating a state of the surface of the substrate including the film, from which the peripheral portion has been removed, by a surface inspection unit and adjusting a cut width of the peripheral portion based on the surface information; and peeling the film, from which the peripheral portion has been removed, by the film forming unit, and a process processing including: forming the film on the surface of the substrate by the film forming unit; and removing the peripheral portion by the cut width adjusted in the adjustment processing in the film forming unit.

Disclosed herein are ink compositions for making a conductive copper structure. The ink composition comprise a copper metal precursor compound, a chelating agent, and a reducing agent. In some embodiments, the redox potential of the reducing agent is adjusted for controlled reduction of copper ion in the copper metal precursor to metal copper metal. Also disclosed herein are methods for making the ink compositions and methods for using the same.

A controller performs an adjustment processing including: forming a film on a surface of a substrate by a film forming unit; removing a peripheral portion of the film by the film forming unit; acquiring surface information indicating a state of the surface of the substrate including the film, from which the peripheral portion has been removed, by a surface inspection unit and adjusting a cut width of the peripheral portion based on the surface information; and peeling the film, from which the peripheral portion has been removed, by the film forming unit, and a process processing including: forming the film on the surface of the substrate by the film forming unit; and removing the peripheral portion by the cut width adjusted in the adjustment processing in the film forming unit.

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.