The teaching relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate includes the following:

a) Providing a substrate with a substrate surface comprising at least one recess,
b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas,
c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and
d) plating the recess.

The invention relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate comprises the following steps: a) Providing a substrate with a substrate surface comprising at least one recess, b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and d) plating the recess.

A method for forming a crystalline metal layer on a three-dimensional (3D) substrate is provided. The method includes applying crystal growth ink to a surface of the 3D substrate, wherein the crystal growth ink includes a metal ionic precursor and a structuring liquid; and exposing the 3D substrate to plasma irradiation from plasma in a vacuum chamber to cause the growing of a crystalline metal layer on the 3D substrate, wherein the exposure is based on a set of predefined exposure parameters.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.

A method of performing an immersion tin process in the production of a component carrier is provided which includes immersing at least a part of a copper surface of the component carrier in a composition containing Sn(II) in an immersion tin unit, while passing a non-oxidizing gas through the immersion tin unit, wherein at least part of the non-oxidizing gas is recycled. In addition, an apparatus for performing an immersion tin process in the production of a component carrier, a method of performing a copper plating process in the production of a component carrier and an apparatus for performing a copper plating process in the production of a component carrier are provided.

A method of performing an immersion tin process in the production of a component carrier is provided which includes immersing at least a part of a copper surface of the component carrier in a composition containing Sn(II) in an immersion tin unit, while passing a non-oxidizing gas through the immersion tin unit, wherein at least part of the non-oxidizing gas is recycled. In addition, an apparatus for performing an immersion tin process in the production of a component carrier, a method of performing a copper plating process in the production of a component carrier and an apparatus for performing a copper plating process in the production of a component carrier are provided.

A liquid-phase process is provided for depositing metal layers in holes of an electronic module placed in a hermetic chamber, from a chemical liquid containing metal compounds intended to form a metal layer. The holes have a depth P and a diameter D such that D>80 m and P/D>10, and the process comprises at least one cycle comprising the following substeps: M1) bringing the chamber to a preset pressure P0 and filling the chamber with the liquid; M2) degassing the holes by bringing the chamber to a low pressure P1, with P1<P0; M3) returning the chamber to the pressure P0 and filling the chamber with the liquid; M4) depositing, in the holes, a metal layer issued from the liquid; M5) emptying the liquid from the chamber; and M6) explosively evaporating the liquid remaining in the holes by bringing the chamber to a low pressure P2, with P2<P1<P0; and reiterating the cycle comprising substeps M1 to M6 at least once in order to obtain one new metal layer per iteration.

The present invention includes methods of manufacturing a metal infused graphitic material. Also described is how this device may be rendered impermeable. The present invention includes the electroplating/electroless deposition of metal on exposed internal and external surfaces of a porous graphitic substrate. The deposition of metal on the internal structure is accomplished by replacing the void space in the porous substrate with an electrolyte solution containing dissolved metallic species. The plating is initiated either through electrochemical means, electroless means, chemical vapor deposition means, or other means obvious to one familiar in the art of metal plating. A post-deposition bath is also described wherein the plating may be removed from one or both sides of the external surface without impacting the internal pore plating.

Upon use of an immersion tin plating solution, contaminants build in the solution, which cause the plating rate and the quality of the plated deposit to decrease. One primary contaminant, which builds in the plating solution upon use, is hydrogen sulfide, H.sub.2S. If a gas is bubbled or blown through the solution, contaminants, especially hydrogen sulfide, can be effectively removed from the solution and, as a result, the high plating rate and plate quality can be restored or maintained. In this regard, any gas can be used, however, it is preferable to use a gas that will not detrimentally interact with the solution, other than to strip out contaminants. Nitrogen is particularly preferred for this purpose because it is efficient at stripping out contaminants, including hydrogen sulfide, but does not induce the oxidation of the tin ions from their divalent state to the tetravalent state, which is detrimental.

A substrate liquid processing apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a processing liquid supply unit 53 configured to supply a processing liquid L1 onto a top surface of the substrate W held by the substrate holding unit 52; and a cover body 6 configured to cover the substrate W. Here, the cover body 6 includes a ceiling unit 61 disposed above the substrate W, a sidewall unit 62 downwardly extended from the ceiling unit 61, and a heating unit 63 provided at the ceiling unit 61 and configured to heat the processing liquid L1 on the substrate W. The sidewall unit 62 of the cover body 6 is placed at an outer periphery side of the substrate W when the processing liquid L1 on the substrate W is heated.